Search for dissertations about: "60 GHz"
Showing result 1 - 5 of 55 swedish dissertations containing the words 60 GHz.
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1. 60 GHz Wireless Propagation Channels: Characterization, Modeling and Evaluation
Abstract : To be able to connect wirelessly to the internet is nowadays a part of everyday life and the number of wireless devices accessing wireless networks worldwide are increasing rapidly. However, with the increasing number of wireless devices and applications and the amount available bandwidth, spectrum shortage is an issue. READ MORE
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2. Mixers and Multifunctional MMICs for Millimeter-Wave Applications
Abstract : This thesis treats the design and characterization of different mixer and multifunctional monolithic microwave integrated circuits (MMICs) in GaAs pHEMT and mHEMT technologies. The MMICs operate at the V (50 – 75 GHz) and G (140 – 220 GHz) bands and several of them demonstrate state-of-the-art performance, level of integration, novel topologies, and/or novel functionality. READ MORE
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3. Rate, Reliability and Secrecy Performance Analysis and Optimization for Millimeter WaveCommunications
Abstract : With the fast development of electronic devices and computer science, various emerging applications (e.g., virtual and augmented reality, ultra-high-definition three-dimensional video, autonomous driving, big data analysis, etc. READ MORE
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4. 60 GHz Mixer and Multifunctional MMICs in GaAs pHEMT and mHEMT technologies
Abstract : In recent years, the 60 GHz band has gained increased academic and commercial interest mainly due to the relative large amount of license free and little used frequency spectrum located in vicinity of 60 GHz. The exact locations of these free frequency bands varies locally but the 5962 GHz band overlap around the world and is therefore a true world wide license free band. READ MORE
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5. Microwave and Millimeter-Wave Monolithic Integrated Circuits in CMOS and GaAs-mHEMT Technologies
Abstract : The objective of this work has been to design and characterize microwave and millimeter-wave components and circuits within a 90 nm Si-CMOS process and a 100 nm GaAs-mHEMT process. The work is divided in two parts depending on the technology. READ MORE