Search for dissertations about: "AlGaN GaN HEMT"

Showing result 1 - 5 of 19 swedish dissertations containing the words AlGaN GaN HEMT.

  2. 1. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

    Author : Vincent Desmaris; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

    Abstract : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). READ MORE

  4. 2. Methods for Characterization and Optimization of AlGaN/GaN HEMT Surface Passivation

    Author : Martin Fagerlind; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; surface states; surface passivation; annealing; processing; AlGaN GaN HEMT; MIS-capacitor;

    Abstract : The Gallium Nitride based high electron mobility transistor is rapidly improving and is emerging as a viable alternative for use in high power applications operating in the microwave frequency domain. The suitability of the AlGaN/GaN material system is due to the possibility to grow epitaxial heterostructures that provide; high electron mobility, high electron saturation velocity, high carrier density and a high dielectric breakdown field. READ MORE

  5. 3. Buffer Related Dispersive Effects in Microwave GaN HEMTs

    Author : Johan Bergsten; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; trapping effects; C-doping; AlGaN GaN interface quality; recessed ohmic contacts; GaN HEMT; buffer design;

    Abstract : In applications such as mobile communication and radar, microwave power generation at high frequency is of utmost importance. The GaN HEMT offers a unique set of properties that makes it suitable for high power amplification at high frequencies. READ MORE

  6. 4. Characterization and Compensation of Thermal Effects in GaN HEMT Technologies

    Author : Johan Bremer; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; thermal coupling; thermal effects; thermal resistance; AlGaN GaN; temperature compensation.; electrothermal; characterization;

    Abstract : Further advancements with GaN based technologies relies on the ability to handle the heat flux, which consequently arises from the high power density. Advanced cooling techniques and thermal optimization of the technology are therefore prioritized research areas. READ MORE

  7. 5. Advanced III-Nitride Technology for mm-Wave Applications

    Author : Anna Malmros; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ohmic contact; passivation; InAlN; high frequency performance; GaN; InAlGaN; HEMT; electron trapping;

    Abstract : Within wireless communication, there is a continuously growing need for more bandwidth due to an increasing number of users and data intense services. The development within sensor systems such as radars, is largely driven by the need for increased detection range and robustness. READ MORE