Search for dissertations about: "AlSb"
Showing result 1 - 5 of 11 swedish dissertations containing the word AlSb.
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1. Scaling of InGaAs/InAlAs and InAs/AlSb HEMTs for microwave/mm-wave applications
Abstract : The InGaAs/InAlAs high electron mobility transistor (HEMT) offers the highest maximum frequency of oscillation fmax and the lowest noise performance (NFmin) for microwave/mm-wave receivers. Similar to other device technologies, the performance of the InGaAs/InAlAs HEMT has gradually been improved by device scaling. READ MORE
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2. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications
Abstract : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. READ MORE
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3. Stability Phenomena in Novel Electrode Materials for Lithium-ion Batteries
Abstract : Li-ion batteries are not only a technology for the future, they are indeed already the technology of choice for today’s mobile phones, laptops and cordless power tools. Their ability to provide high energy densities inexpensively and in a way which conforms to modern environmental standards is constantly opening up new markets for these batteries. READ MORE
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4. Ultra-Low Power InAs/AlSb HEMTs for Cryogenic Low-Noise Applications
Abstract : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology for ultra-low power and low noise applications. Due to the low bandgap (0. READ MORE
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5. Heterostructure Diodes for Millimeter Wave Power Generation
Abstract : This thesis deals with two types of heterostructure diodes namely the Resonant Tunneling Diode (RTD) and the Single barrier varactor diode (SBV). The RTD is a device for high frequency generation either as a negative reistance oscillators or as a multiplier. Different means to reach high frequencies are outlined. READ MORE