Search for dissertations about: "Boron impurity"
Showing result 1 - 5 of 9 swedish dissertations containing the words Boron impurity.
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1. CVD Chemistry of Organoborons for Boron-Carbon Thin Film Depositions
Abstract : Boron-carbon thin films enriched with 10B are potential neutron converting layers for 10B-based solid state neutron detectors given the good neutron absorption cross section of 10B atoms in thin films. The common neutron-transparent base material, Al (melting point 660 °C), limits the deposition temperature and the use of chlorinated precursors forming corrosive by-products such as HCl. READ MORE
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2. Chemical vapour deposition of boron-carbon thin films from organoboron precursors
Abstract : Boron-carbon (BxC) thin films enriched in 10B are potential neutron converting layers for 10Bbased solid-state neutron detectors given the good neutron absorption cross-section of 10B atoms in the thin film. Chemical Vapour Deposition (CVD) of such films faces the challenge that the maximum temperature tolerated by the aluminium substrate is 660 °C and low temperature CVD routes for BxC films are thus needed. READ MORE
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3. Electrically active defects in 4H silicon carbide
Abstract : Development of future technology needs to widen the application areas of semiconductor devices. The increased requirements are beyond the limits of the most common semiconductors today like silicon or gallium arsenide. Use of new materials could resolve many performance issues and also offer increased reliability and reduced cost of the devices. READ MORE
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4. Calculations of defect related properties in semiconductors
Abstract : Many of the most important and useful properties of crystalline materials, such as mechanical strength and electrical resistance, are determined by the presence of lattice defects and impurities. Well known examples are dislocations which control plastic flow and make metals ductile, and dopant atoms which control the extrinsic conduction in semiconductors and insulators. READ MORE
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5. Electronic Characterization of CVD Diamond
Abstract : Diamond is a promising material for high-power, high-frequency and hightemperatureelectronics applications, where its outstanding physical propertiescan be fully exploited. It exhibits an extremely high energy gap, veryhigh carrier mobilities, high breakdown field strength, and the highest thermalconductivity of any wide bandgap material. READ MORE