Search for dissertations about: "CMOS v band"
Showing result 1 - 5 of 17 swedish dissertations containing the words CMOS v band.
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1. III-V Devices for Emerging Electronic Applications
Abstract : Today’s digitalized society relies on the advancement of silicon (Si) Complementary Metal Oxide Semiconductor (CMOS) technology, but the limitations of down-scaling and the rapidly increasing demand for added functionality that is not easily achieved in Si, have pushed efforts to monolithically 3D-integrate III-V devices above the Si-CMOS technology. In addition, the demand for increased computational power and handling of vast amounts of data is rapidly increasing. READ MORE
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2. CMOS High Frequency Circuits for Spin Torque Oscillator Technology
Abstract : Spin torque oscillator (STO) technology has a unique blend of features, including but not limited to octave tunability, GHz operating frequency, and nanoscaled size, which makes it highly suitable for microwave and radar applications. This thesis studies the fundamentals of STOs, utilizes the state-of-art STO's advantages, and proposes two STO-based microwave systems targeting its microwave applications and measurement setup, respectively. READ MORE
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3. Efficient mm-Wave Transmitter Design in CMOS Technology
Abstract : An increasing demand of higher data rates in wireless communication forces the industry to look to higher frequencies to find the required bandwidths. This thesis is about analog transmitters in CMOS for millimeter-wave communication, and it focuses on improving power amplifiers and frequency generation circuits, and increase their efficiency. READ MORE
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4. Ultrathin gate oxides for future SiGe CMOS devices
Abstract : .... READ MORE
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5. Integration of Ferroelectric HfO2 onto a III-V Nanowire Platform
Abstract : The discovery of ferroelectricity in CMOS-compatible oxides, such as doped hafnium oxide, has opened new possibilities for electronics by reviving the use of ferroelectric implementations on modern technology platforms. This thesis presents the ground-up integration of ferroelectric HfO2 on a thermally sensitive III-V nanowire platform leading to the successful implementation of ferroelectric transistors (FeFETs), tunnel junctions (FTJs), and varactors for mm-wave applications. READ MORE