Search for dissertations about: "Fe doped GaN"

Found 5 swedish dissertations containing the words Fe doped GaN.

  2. 1. Gallium nitride templates and its related materials for electronic and photonic devices

    Author : Thomas Aggerstam; Sebastian Lourdudoss; Marc Ilegems; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; heteroepitaxy of GaN; BGaAlN; Fe doped GaN; HEMT; carrier capture cross section; intersubband transition modulator; Materials science; Teknisk materialvetenskap;

    Abstract :  .... READ MORE

  4. 2. Design, Fabrication and Characterization of GaN HEMTs for Power Switching Applications

    Author : Björn Hult; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; DCIT; SCE; high voltage; isolation; ‘buffer-free’; gate dielectric; GaN HEMT; passivation; DIBL;

    Abstract : The unique properties of the III-nitride heterostructure, consisting of gallium nitride (GaN), aluminium nitride (AlN) and their ternary compounds (e.g. AlGaN, InAlN), allow for the fabrication of high electron mobility transistors (HEMTs). READ MORE

  5. 3. Optical properties of GaN and InGaN studied by time- and spatially-resolved spectroscopy

    Author : Tomas Uždavinys; Saulius Marcinkevičius; Audrius Alkauskas; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Gallium nitride; InGaN; near-field microscopy; photoexcited carrier dynamics; intervalley energy; Fe centers; In incorporation; Physics; Fysik;

    Abstract : The past decade has seen rapid expansion in the use of group III-nitride based devices. White InGaN LEDs are substituting incandescent light bulbs, space satellite industry adopting ion-radiation-resistant GaN transistors, and AlGaN deep UV LEDs are increasingly being used for water disinfection and air purification. READ MORE

  6. 4. Optimization of Ohmic Contacts and Surface Passivation for ‘Buffer-Free’ GaN HEMT Technologies

    Author : Chen Ding Yuan; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; QuanFINE; passivation; GaN HEMT; pretreatment; ohmic contact;

    Abstract : Gallium nitride high electron mobility transistors (GaN HEMTs) draw attention from high frequency and high power industries due to unique properties including high electron mobility and saturation velocity combined with high breakdown voltage. This makes GaN HEMTs suitable for power devices with high switching speed and high frequency applications with high power density requirements. READ MORE

  7. 5. Hot-wall MOCVD for advanced GaN HEMT structures and improved p-type doping

    Author : Alexis Papamichail; Vanya Darakchieva; Anelia Kakanakova-Gueorguieva; Jr-Tai Chen; Zlatko Sitar; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Hot-wall MOCVD; III-nitrides; p-type GaN; HEMTs; Linearity; High-Al barrier;

    Abstract : The transition to energy efficient smart grid and wireless communication with improved capacity require the development and optimization of next generation semiconductor technologies and electronic device components. Indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with bandgap energies ranging from 0. READ MORE