Search for dissertations about: "GaAs"

Showing result 1 - 5 of 234 swedish dissertations containing the word GaAs.

  2. 1. Silicon δ-doping and GaAs/Si/GaAs heterostructures

    Author : Jan Thordson; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; GaAs Si GaAs; GaAs; delta-doping; heterostructures; MBE; silicon;

    Abstract : .... READ MORE

  4. 2. Microstructure of the Schottky contact : Ag/GaAs and Au/GaAs

    Author : Qiu-Hong Hu; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Au; atom-probe fiels-ion microscopy; Schottky contact; interface; Ag; microstructure; transmission electron microscopy; GaAs; oxygen;

    Abstract : .... READ MORE

  5. 3. Metamorphic Heterostructures and Lasers on GaAs

    Author : Ivar Tångring; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; metamorphic heterostructures; InGaAs quantum well; graded buffer layer; Semiconductor laser; GaAs; molecular beam epitaxy; telecom laser;

    Abstract : The objective of this thesis is to demonstrate the metamorphic growth of heterostructure lasers on GaAs substrates. Many heterostructure devices have their performance limited by the need to grow on lattice-matched substrates. READ MORE

  6. 4. Atom-probe microanalysis of the AuGe/GaAs interface

    Author : Anders Kvist; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; interface; GaAs; atom-probe field-ion microscopy; microstructure; ohmic contact; AuGe; diffusion;

    Abstract : .... READ MORE

  7. 5. Optimization of Metamorphic Materials on GaAs Grown by MBE

    Author : Yuxin Song; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; heterostructures; alloy graded buffer; GaAs; molecular beam epitaxy; metamorphic; threading dislocation; InGaAs;

    Abstract : Advanced epitaxial technologies such as molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE) have enabled the idea of semiconductor heterostructures, which built up the foundation of the fast developing information and communication technology nowadays. Lattice mismatch has been a problem limiting designs of semiconductor heterostructures. READ MORE