Search for dissertations about: "GaN InGaN"

Showing result 1 - 5 of 17 swedish dissertations containing the words GaN InGaN.

  2. 1. Molecular Beam Epitaxy and Characterisation of GaN-compounds on GaAs(001) and Sapphire(0001)

    Author : Otto Zsebök; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AlGaN GaN HFET; plasma-assisted MBE; GaNAs; nitridation damage; InGaN; group-III nitrides; GaN; AlGaN; phase-separation;

    Abstract : The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures have attracted much attention due to their potential for applications in high-power, high-frequency electronic and optoelectronic devices. The optical emission range of the GaN-based alloys cover the whole visible range from near infrared (IR) to ultraviolet (UV). READ MORE

  4. 2. Optical properties of GaN and InGaN studied by time- and spatially-resolved spectroscopy

    Author : Tomas Uždavinys; Saulius Marcinkevičius; Audrius Alkauskas; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Gallium nitride; InGaN; near-field microscopy; photoexcited carrier dynamics; intervalley energy; Fe centers; In incorporation; Physics; Fysik;

    Abstract : The past decade has seen rapid expansion in the use of group III-nitride based devices. White InGaN LEDs are substituting incandescent light bulbs, space satellite industry adopting ion-radiation-resistant GaN transistors, and AlGaN deep UV LEDs are increasingly being used for water disinfection and air purification. READ MORE

  5. 3. Carrier dynamics in blue and green InGaN LED structures

    Author : Rinat Yapparov; Saulius Marcinkevičius; Ulrich Theodor Schwarz; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; InGaN quantum wells; interwell transport; near-field scanning optical microscopy; internal quantum efficiency; V-defects; InGaN-kvantbrunnar; transport mellan brunnar; optisk mikroskopi med närafältsskanning; intern kvanteffektivitet; V-defekter; Physics; Fysik; Optics and Photonics; Optik och fotonik;

    Abstract : This thesis focuses on effects that are critical to achieving high internal quantum efficiency (IQE) in GaN-based light-emitting diodes (LEDs) that emit in a broad spectral range, from violet to green-yellow. These effects include interwell carrier transport in multiple quantum well (QW) structures, lateral transport in the QW plane, and radiative and nonradiative recombination. READ MORE

  6. 4. InGaN Quantum Dots Grown on GaN Pyramid Arrays

    Author : Chih-Wei Hsu; Per Olof Holtz; Robert A. Taylor; Linköpings universitet; []
    Keywords : ;

    Abstract : Selective-area growth (SAG) of InGaN on GaN pyramids, which allows the formation of additional hybrid quantum structures, including quantum wires and quantum dots (QDs) in a site-controlled fashion, is attractive for both fundamental research and device application. The site-controlled growth of QDs showing sharp emission lines is seen as the first step toward the frontier quantum information application (QIA). READ MORE

  7. 5. Controlled growth of hexagonal GaN pyramids and InGaN QDs

    Author : Anders Lundskog; Erik Janzén; Urban Forsberg; Per-Olof Holtz; Lars-Erik Wernersson; Linköpings universitet; []
    Keywords : ;

    Abstract : Gallium-nitride (GaN) and its related alloys are direct band gap semiconductors, with a wide variety of applications. The white light emitting diode (LED) is of particular importance as it is expected to replace energy inefficient light bulb and hazardous incandescent lamps used today. READ MORE