Search for dissertations about: "GaN diode"

Showing result 1 - 5 of 16 swedish dissertations containing the words GaN diode.

  2. 1. High Efficiency Microwave Amplifiers and SiC Varactors Optimized for Dynamic Load Modulation

    Author : Christer Andersson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nonlinear measurements; power amplifiers; load modulation; GaN; SiC; varactors; HEMT; wide bandgap technology; energy efficiency;

    Abstract : The increasing use of mobile networks as the main source of internet connectivity is creating challenges in the infrastructure. Customer demand is a moving target and continuous hardware developments are necessary to supply higher data rates in an environmentally sustainable and cost effective way. READ MORE

  4. 2. High Frequency (MHz) Resonant Converters using GaN HEMTs and Novel Planar Transformer Technology

    Author : Hari Babu Kotte; kent Bertilsson; Bengt Oelmann; Noel Shammas; Torbjörn Thiringer; Per Karlsson; Mittuniversitetet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN HEMTs; MHz Frequency; Resonant Converters; Planar Transformer Technology;

    Abstract : The increased power consumption and power density demands of moderntechnologies have increased the technical requirements of DC/DC and AC/DC powersupplies. In this regard, the primary objective of the power supply researcher/engineeris to build energy efficient, high power density converters by reducing the losses andincreasing the switching frequency of converters respectively. READ MORE

  5. 3. Optical Characterization of GaN/AIGaN Quantum Well Structures

    Author : Hamid Haratizadeh; Tatiana Shubina; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : The III-nitride material family is particularly well suited for optoelectronic applications, e.g. as UV light emitters in future lighting solutions that are expected to replace the incandescent and fluorescent lamps in use today. READ MORE

  6. 4. Controlled growth of hexagonal GaN pyramids and InGaN QDs

    Author : Anders Lundskog; Erik Janzén; Urban Forsberg; Per-Olof Holtz; Lars-Erik Wernersson; Linköpings universitet; []
    Keywords : ;

    Abstract : Gallium-nitride (GaN) and its related alloys are direct band gap semiconductors, with a wide variety of applications. The white light emitting diode (LED) is of particular importance as it is expected to replace energy inefficient light bulb and hazardous incandescent lamps used today. READ MORE

  7. 5. Epitaxial strategies for defect reduction in GaN for vertical power devices

    Author : Rosalia Delgado Carrascon; Vanya Darakchieva; Plamen Paskov; Peter Ramvall; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Group-III nitride materials, gallium nitride (GaN), aluminum nitride (AlN) and indium nitride (InN) have direct band gaps with band gap energies ranging from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN) wavelengths and covering the entire spectral range from 0.7 eV to 6.2 eV upon alloying. READ MORE