Search for dissertations about: "GaN-HEMT"
Showing result 1 - 5 of 28 swedish dissertations containing the word GaN-HEMT.
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1. Optimum GaN HEMT Oscillator Design Targeting Low Phase Noise
Abstract : The thesis considers design of low phase noise oscillators, given the boundary condition of the used technology. Important conditions are the power handling of the active device, device noise floor, the quality factor of the resonator, bias settings, and low frequency noise. READ MORE
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2. GaN HEMT Low Frequency Noise Characterization for Low Phase Noise Oscillator Design
Abstract : The thesis presents low frequency noise (LFN) characterization of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) for low phase noise oscillator design. First, GaN HEMT technology is benchmarked versus other transistor technologies, e.g. READ MORE
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3. Low Phase Noise GaN HEMT Oscillator Design based on High-Q resonators
Abstract : The thesis considers the design and optimization of oscillators targeting low phase noise, given boundary conditions from the technology. Crucial technology figures are power capability, RF noise figure, low-frequency noise and the quality factor (Q-factor) of the resonator. READ MORE
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4. Optimization of Ohmic Contacts and Surface Passivation for ‘Buffer-Free’ GaN HEMT Technologies
Abstract : Gallium nitride high electron mobility transistors (GaN HEMTs) draw attention from high frequency and high power industries due to unique properties including high electron mobility and saturation velocity combined with high breakdown voltage. This makes GaN HEMTs suitable for power devices with high switching speed and high frequency applications with high power density requirements. READ MORE
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5. GaN HEMT Based Highly Integrated Active Antenna Element for Millimeter-Wave Array Transmitters
Abstract : .... READ MORE