Search for dissertations about: "HEMT modeling"

Showing result 1 - 5 of 15 swedish dissertations containing the words HEMT modeling.

2. 1. Experimentally Based HFET Modeling for Microwave and Millimeter Wave Applications

   Author : Mikael Garcia; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MODFET; soft-breakdown; cold FET; large-signal; source balance; SDHT; dispersion; noise figure; temperature noise model; small-signal; TEGFET; direct extraction; Chalmers model; noise parameters; modeling; HEMT; HFET; noise;

   Abstract : Transistor models are very important in the design of Monolithic Microwave Integrated Circuits (MMICs). Circuit simulations based on accurate transistor models are one of the keys to high circuit yield. Transistor models can also be used to trace problems in the device fabrication processes. READ MORE

4. 2. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

   Author : Vincent Desmaris; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

   Abstract : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). READ MORE

5. 3. Microwave FET Modeling and Applications

   Author : Christian Fager; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MESFET; uncertainty; model; FMCW; statistical; HEMT; small-signal; extraction; distortion; intermodulation; CMOS; LDMOS; power amplifier; estimation; FET; large-signal; radar; AM noise;

   Abstract : This thesis deals with three distinct topics within the areas of modeling, analysis and circuit design with microwave field effect transistors (FETs). First, the extraction of FET small-signal model parameters is addressed. READ MORE

6. 4. Large-Signal Modeling of Microwave Transistors

   Author : Lars Bengtsson; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; large-signal; HEMT; non-linear models; de-embedding; high-efficiency; class-E amplifier; LDMOS; HBT; HFET; model parameter extraction; microwave transistors;

   Abstract : The development of computer aided design tools for microwave circuit design has increased the interest for accurate transistor models. The circuit complexity has grown as the CAD tools have been improved and the need to predict how non-linear circuits behave has also been increased. READ MORE

7. 5. RF and Noise Optimization of Pseudomorphic inP HEMT Technology

   Author : Mikael Malmkvist; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; fabrication; high electron mobility transistor HEMT ; optimization; Schottky layer; InAlAs; Indium phosphide InP ; MMIC.; noise; pseudomorphic; modeling; InGaAs;

   Abstract : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the electronic device utilized for the highest frequency and/or the lowest noise applications known to date for analog transistor-based circuits. Hence it is of both scientific and technological interest to explore the InP HEMT for even further improvement in device performance. READ MORE