Search for dissertations about: "HVPE"

Showing result 1 - 5 of 12 swedish dissertations containing the word HVPE.

  2. 1. Leveraging HVPE for III-V/Si Integration and Mid-Infrared Photonic Device Fabrication

    Author : Axel Strömberg; Yan-Ting Sun; Sebastian Lourdudoss; Mattias Hammar; Charles Cornet; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; HVPE; III-V Si; Photovoltaics; PEC; MIR; non-linear optics; QPM; QCL; Energiteknik; Energy Technology;

    Abstract : This work covers the implementation of highly specialized epitaxial techniques enabled by the near-equilibrium hydride vapor-phase epitaxy growth process in III-V/Si integration for Si-based tandem solar cells and photoelectrochemical reactions, quasi phase matching GaP structures on GaAs substrates, and regrowth of InP:Fe on quantum cascade lasing structures.III-V/Si integration is an important topic in several fields of research with a significant one being solar energy harvesting. READ MORE

  4. 2. Epitaxy, analysis and application of semi-insulating III-V materials

    Author : David Söderström; KTH; []
    Keywords : InP; GaInP; semi-insulating materials; iron doping; ruthenium doping; HVPE; diffusion; deep levels; capture cross sections; resistivity analysis; buried heterostructure laser;

    Abstract : Semi-insulating (SI) III-V materials can provide electricalisolation for integration and capacitance minimisation for highspeed operation. Compared to the polyimides, these can offerbetter thermal conduction. Ever since the fabrication of thefirst SI III-V materials, transition metals have been utilisedas deep impurities to impart SI properties. READ MORE

  5. 3. Epitaxy of group III-nitride materials using different nucleation schemes

    Author : Rosalia Delgado Carrascon; Vanya Darakchieva; Daniela Gogova; Alice Hospodková; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Group III-nitride materials, gallium nitride (GaN), aluminum nitride (AlN) and indium nitride (InN) have direct band gaps with band gap energies ranging from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN) wave-lengths, covering the entire spectral range from 0.7 eV to 6.2 eV upon alloying. READ MORE

  6. 4. Electronic properties of intrinsic defects and impurities in GaN

    Author : Tran Thien Duc; Carl Hemmingsson; Galia Pozina; Erik Janzén; Walter Meyer; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : With its outstanding properties such as a wide direct bandgap (3.4 eV), high electron mobility and high breakdown voltage, GaN and its alloys with In and Al are considered as one of the most important semiconductors for optoelectronic devices and high-power and high-frequency transistors. READ MORE

  7. 5. Growth of thick GaN layers on sapphire by Hydride Vapour Phase Epitaxy

    Author : Henrik Larsson; Werner Seifert; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : Gallium nitride (GaN) is a wide bandgap material that is already extensively used in industrial production of optoelectronic devices (light emitters) that operate in the blue and ultraviolet wavelength range. GaN is interesting not only because it has a wide bandgap (3. READ MORE