Search for dissertations about: "Halvledarfysik"

Showing result 11 - 15 of 50 swedish dissertations containing the word Halvledarfysik.

  2. 11. Effects of the Spin-Orbit Interaction on Transport and Optical Properties of III-V Semiconductor Quantum Wells

    Author : Vladimir Froltsov; Matematisk fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; spin-orbit interaction; quantum well; III-V; Raman scattering; magnetoresistance; weak localization; spin distribution; magnetic field; Fysik; Physics; Fysicumarkivet A:2000:Froltsov; Halvledarfysik; Semiconductory physics; semiconductor;

    Abstract : Effects of the intrinsic electron spin-orbit interaction on transport and optical properties of III-V semiconductor quantum wells have been studied theoretically. It is shown that due to crystal anisotropy of this interaction, the weak localization magnetoresistance in a magnetic field parallel to interfaces is very sensitive to the epitaxy growth direction and also to the orientation of the magnetic field with respect to the crystal axes. READ MORE

  4. 12. Spectroscopic studies of III-V semiconductors in two, one and zero dimensions

    Author : Dan Hessman; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; InAs-InP; low-dimensional structures; quantum wells; quantum dots; quantum wires; k.p calculations; type-II; photoluminescence; V grooves; Stranski Krastanow; single dot spectroscopy; GaAs-InP; III-V semiconductors; Fysicumarkivet A:1996:Hessman; InAs-GaAs; GaInAs-InP; Halvledarfysik; InP-GaInP; Semiconductory physics;

    Abstract : In this thesis, spectroscopic studies of quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) in III-V semiconductors are presented. The electronic structure of these low-dimensional structures have been studied by absorption, photocurrent, electroreflectance, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. READ MORE

  5. 13. Cadmium Free Buffer Layers and the Influence of their Material Properties on the Performance of Cu(In,Ga)Se2 Solar Cells

    Author : Adam Hultqvist; Charlotte Platzer-Björkman; Tobias Törndahl; Marika Edoff; Takashi Minemoto; Uppsala universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Cu In; Ga Se2; Solar cells; Thin film; Buffer layer; Window layer; ZnO; Zn O; S ; Zn; Mg O; Zn-Sn-O; Semiconductor physics; Halvledarfysik; Engineering Science with specialization in Solid State Physics; Teknisk fysik med inriktning mot fasta tillståndets fysik;

    Abstract : CdS is conventionally used as a buffer layer in Cu(In,Ga)Se2, CIGS, solar cells. The aim of this thesis is to substitute CdS with cadmium-free, more transparent and environmentally benign alternative buffer layers and to analyze how the material properties of alternative layers affect the solar cell performance. READ MORE

  6. 14. Scanning Tunneling Microscopy Induced Luminescence Studies of Semiconductor Nanostructures

    Author : Ulf Håkanson; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; transmission electron microscopy TEM ; III-V semiconductors; low-dimensional structures; nanostructures; single dot spectroscopy; Stranski-Krastanow; quantum dot QD ; Semiconductory physics; polarization; ordering; InP; GaInP; photon mapping; scanning tunneling microscopy STM ; scanning tunneling luminescence STL ; Halvledarfysik; Fysicumarkivet A:2003:Håkanson;

    Abstract : This thesis treats scanning tunneling luminescence (STL) investigations of semiconductor nanostructures. The STL technique combines scanning tunneling microscopy (STM) with detection of photons, induced by the tunneling electrons. The high spatial resolution in STM and the local excitation allow for optical investigations on the nanometer-scale. READ MORE

  7. 15. Integration of epitaxial SiGe(C) layers in advanced CMOS devices

    Author : Julius Hållstedt; Henry Radamson; Eugene A. Fitzgerald; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Silicon Germanium Carbon SiGeC ; Chemical Vapor Deposition CVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; Spacer Gate Technology; Semiconductor physics; Halvledarfysik;

    Abstract : Heteroepitaxial SiGe(C) layers have attracted immense attention as a material for performance boost in state of the art electronic devices during recent years. Alloying silicon with germanium and carbon add exclusive opportunities for strain and bandgap engineering. READ MORE