Search for dissertations about: "High-κ"

Showing result 1 - 5 of 8 swedish dissertations containing the word High-κ.

  2. 1. Investigation of Novel Metal Gate and High-κ Dielectric Materials for CMOS Technologies

    Author : Jörgen Westlinder; Jörgen Olsson; Stefan Bengtsson; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; metal gate; high-κ dielectics; titanium nitride; zirconium nitride; MOSFET; thin film; tantalum oxide; aluminum nitride; Elektronik; Electronics; Elektronik;

    Abstract : The demands for faster, smaller, and less expensive electronic equipments are basically the driving forces for improving the speed and increasing the packing density of microelectronic components. Down-scaling of the devices is the principal method to realize these requests. READ MORE

  4. 2. Electrical Characterization of III-V Nanostructure

    Author : Aein Shiri Babadi; Institutionen för elektro- och informationsteknik; []
    Keywords : High-κ; Metal-Oxide-Semicondcutor capacitors; MOSCAPs; III-V semiconductors; InAs; GaSb; interface traps; border traps; C-V; Simulations; Nanowire; MOSFET; Fabrication;

    Abstract : This thesis investigates the electronic properties of a number of novel III-V materials and material combinations for transistor applications. In particular, high-κ/InAs metal-oxide-semiconductor (MOS) structures and transport properties of GaSb nanowires have been studied. READ MORE

  5. 3. Reaction Mechanisms and Dynamics in the Early Stage of High-κ Oxide Atomic Layer Deposition : Investigations by In Situ and Operando X-ray Photoemission Spectroscopy

    Author : Giulio D Acunto; NanoLund: Centre for Nanoscience; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; atomic layer depostion ALD ; high-k oxide; in situ and operando study; XPS; APXPS; Fysicumarkivet A:2022:D Acunto;

    Abstract : Atomic layer deposition (ALD) is an outstanding deposition technique to deposit highly conformal and uniform thin films with atomic precision. In particular, ALD of transition metal oxide layers from metal amido complexes and water finds its way in several technological fields, including green energy devices and in the semiconductor industry. READ MORE

  6. 4. Novel concepts for advanced CMOS : Materials, process and device architecture

    Author : Dongping Wu; KTH; []
    Keywords : CMOS technology; MOSFET; high-k; gate dielectric; ALD; surface pre-treatment; metal gate; poly-SiGe; strained SiGe; surface-channel; buried-channel; notched gate;

    Abstract : The continuous and aggressive dimensional miniaturization ofthe conventional complementary-metal-oxide semiconductor (CMOS)architecture has been the main impetus for the vast growth ofIC industry over the past decades. As the CMOS downscalingapproaches the fundamental limits, unconventional materials andnovel device architectures are required in order to guaranteethe ultimate scaling in device dimensions and maintain theperformance gain expected from the scaling. READ MORE

  7. 5. III–V Nanowire Surfaces

    Author : Martin Hjort; NanoLund: Centre for Nanoscience; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; low energy electron microscopy; scanning tunneling spectroscopy; scanning tunneling microscopy; surface; III–V semiconductor materials; nanowire; photoemission electron microscopy; photoelectron spectroscopy; Fysicumarkivet A:2014:Hjort;

    Abstract : This dissertation deals with the geometric and electronic structure of surfaces on III–V semiconductor nanowires (NWs). NWs made of InAs, GaAs, and InP have been studied using scanning tunneling microscopy/spectroscopy (STM/S), low energy electron microscopy (LEEM), photoemission electron microscopy (PEEM), and x-ray photoelectron spectroscopy (XPS). READ MORE