Search for dissertations about: "III- nitrides"

Showing result 1 - 5 of 40 swedish dissertations containing the words III- nitrides.

  2. 1. Cathodoluminescence Studies of Quantum Structures and III-V nitrides

    Author : Anders Petersson; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; AlGaN; Fysik; Physics; GaN-AlGaN; single dot spectroscopy; InP-GaInP; Stranski Krastanow; quantum dots; quantum wires; low-dimensional structures; InAs-GaAs; III-V nitride; Cathodoluminescence; III-V semiconductors; Fysicumarkivet A:1999:Petersson;

    Abstract : Characterization of low-dimensional semiconductor structures is a challenging task. The thesis is based on experiments, using cathodoluminescence (CL) as a tool for characterization. The high spatial resolution and the possibility of spectroscopy of small structures make CL one of the most powerful techniques for these types of investigations. READ MORE

  4. 2. Optical Characterization of III-Nitride and II-V Semiconductor Nanowires

    Author : David Lindgren; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; III-Nitride; III-V; Fysicumarkivet A:2014:Lindgren; Semiconductor; Nanowire; Photoluminescence; Cathodoluminescence;

    Abstract : The optical properties of III-V semiconductor nanowires for optical devices have been investigated by photoluminescence spectroscopy, cathodoluminescence spectroscopy and cathodoluminescence imaging. The material systems that have been studied include the nitrides (InN, GaN and AlN) and ternaries, and a few common phosphides and arsenides. READ MORE

  5. 3. Thermal conductivity of wide and ultra-wide bandgap semiconductors

    Author : Dat Tran; Plamen Paskov; Vanya Darakchieva; Martin Kuball; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; III-nitrides; β-Ga2O3; Thermal conductivity; Thermal transport;

    Abstract : This PhD thesis presents experimental and theoretical studies of the thermal conductivity of wide and ultra-wide bandgap semiconductors including GaN, AlN, β-Ga2O3 binary compounds, and AlxGa1−xN, ScxAl1−xN, YxAl1−xN ternary alloys. Thermal conductivity measurements are conducted using the transient thermoreflectance (TTR) technique and the results are interpreted using analytical models based on the solution of the Boltzmann transport equation (BTE) within the relaxation time approximation (RTA). READ MORE

  6. 4. GaN, AlGaN, GaNAs and Related Heterostructures Grown by Molecular Beam Epitaxy

    Author : Hyonju Kim; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; surface segregation; GaNAs; plasma-assisted MBE; stacking fault; AlGaN GaN; heterointerface; unintentional impurities; III-nitrides;

    Abstract : This work deals with growth and characterization of III-nitrides and related heterostructures as well as GaNAs alloys grown by plasma assisted molecular beam epitaxy (MBE). The III-nitrides belong to the wide bandgap semiconductors due to their large energy bandgap spanning from 1.9 to 6.2 eV. READ MORE

  7. 5. Optical studies of AlN and GaO based nanostructures using Mueller matrix spectroscopic ellipsometry

    Author : Samiran Bairagi; Kenneth Järrendahl; Ching-Lien Hsiao; Bruno Gallas; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; GLAD; MMSE; PVD; III-nitrides; Oxides; Anisotropy; Bandgap;

    Abstract : This thesis explores the diverse optical properties manifested when light interacts with various materials, with an emphasis on circular polarization- and bandgaprelated phenomena. The studies in this work are centered around Mueller matrix spectroscopic ellipsometry, with the objective of synthesizing and characterizing nanostructured and high-quality thin films to expand our understanding of the optical properties arising from their underlying structure and electronic transitions, respectively. READ MORE