Search for dissertations about: "III-V compounds"

Showing result 1 - 5 of 16 swedish dissertations containing the words III-V compounds.

  1. 1. Adventures of III-V Semiconductor Surfaces

    Author : Sandra Benter; NanoLund: Centre for Nanoscience; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; III-V; semiconductor surfaces; Bismuth; InAs; GaAs; droplets; STM; XPS; XPEEM; ARPES; Fysicumarkivet A:2023:Benter;

    Abstract : Tailoring the surface composition and morphology of materials to enable new electronic devices is important for a wide range of applications such as quantum computing or spintronics. A fundamental understanding of the changes induced in the surface during different process steps can help to establish new synthesis routes as well as devices. READ MORE

  2. 2. The band offset and the critical layer thickness in III-V compound semiconductor heterostructures

    Author : Shu Min Wang; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; interface morphology; molecular beam epitaxy; band offset; transmission electron microscopy; InGaAs; strain; photoluminescence; critical layer thickness; quantum wells; heterostructures; III-V compounds;

    Abstract : .... READ MORE

  3. 3. Metall organic vapour phase epitaxy for advanced III-V devices

    Author : Nils Nordell; Sture Petersson; Gunnar Landgren; Ferdinand Scholz; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metalorganic vapour phase epitaxy MOVPE ; III-V compound semiconductors; epitaxial uniformity; p-type doping profiles; epitaxial regrowth; chlorine-MOVPE; buried heterostructure laser; heterostructure bipolar transistor; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Metalorganic vapour phase epitaxy (MOVPE) has proven to be a successful method for growth of structures for advanced optoelectronic semiconductor devices in III-V compounds. This thesis deals with technological and process related aspects of MOVPE from an experimental perspective. READ MORE

  4. 4. Synchrotron X-ray based characterization of technologically relevant III-V surfaces and nanostructures

    Author : Andrea Troian; NanoLund: Centre for Nanoscience; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; synchrotron radiation; III-V semiconductors; high-k oxides; passivation; doping; XPS; AP-XPS; SPEM; XRF; full field X-ray diffraction microscopy; Fysicumarkivet A:2019:Troian;

    Abstract : Innovative design and materials are needed to satisfy the demand for efficient and scalable devices for electronic and opto-electronic applications, such as transistors, LEDs, and solar cells. Nanostructured III-V semiconductors are an appealing solution, combining the excellent functional properties of III-V materials with the flexibility typical of nanostructures, such as the nanowires (NWs) studied here. READ MORE

  5. 5. Leveraging HVPE for III-V/Si Integration and Mid-Infrared Photonic Device Fabrication

    Author : Axel Strömberg; Yan-Ting Sun; Sebastian Lourdudoss; Mattias Hammar; Charles Cornet; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; HVPE; III-V Si; Photovoltaics; PEC; MIR; non-linear optics; QPM; QCL; Energiteknik; Energy Technology;

    Abstract : This work covers the implementation of highly specialized epitaxial techniques enabled by the near-equilibrium hydride vapor-phase epitaxy growth process in III-V/Si integration for Si-based tandem solar cells and photoelectrochemical reactions, quasi phase matching GaP structures on GaAs substrates, and regrowth of InP:Fe on quantum cascade lasing structures.III-V/Si integration is an important topic in several fields of research with a significant one being solar energy harvesting. READ MORE