Search for dissertations about: "III-V"

Showing result 1 - 5 of 295 swedish dissertations containing the word III-V.

2. 1. III-V Devices for Emerging Electronic Applications

   Author : Patrik Olausson; NanoLund: Centre for Nanoscience; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy;

   Abstract : Today’s digitalized society relies on the advancement of silicon (Si) Complementary Metal Oxide Semiconductor (CMOS) technology, but the limitations of down-scaling and the rapidly increasing demand for added functionality that is not easily achieved in Si, have pushed efforts to monolithically 3D-integrate III-V devices above the Si-CMOS technology. In addition, the demand for increased computational power and handling of vast amounts of data is rapidly increasing. READ MORE

4. 2. III-V Nanowires for High-Speed Electronics

   Author : Fredrik Lindelöw; NanoLund: Centre for Nanoscience; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; Hall; DC; RF; Nanowire; MOSFET; Hall; DC; RF;

   Abstract : III-V compound materials have long been used in RF applications in high-electron-mobility-transistors (HEMTs) and bipolar-junction-transistors (BJTs). Now, III-V is also being viewed as a material candidate for replacing silicon in the n-channel in CMOS processes for increased drive currents and reduced power consumption in future nodes. READ MORE

5. 3. Vertical III-V Nanowire MOSFETs

   Author : Olli-Pekka Kilpi; Nanoelektronik; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; III-V; InGaAs; Vertical; Heterostructure; High frequency;

   Abstract : Vertical III-V nanowire MOSFETs are interesting candidates for future digital and analog applications. High electron velocity III-V materials allow fabrication of low power and high frequency MOSFETs. Vertical vapor-liquid-solid growth enables fabrication of axial and radial heterostructure nanowires. READ MORE

6. 4. Process development of III-V-based infrared detectors

   Author : David Ramos Santesmases; Per-Erik Hellström; Sanjay Krishna; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; infrared detectors; Type-II superlattice; surface leakage; high operating temperature; passivation; optical concentration; modulation transfer function; noise.; infraröda detektorer; Typ-II supergitter; ytströmmar; hög arbetstemperatur; passivering; optisk koncentration; moduleringsöverföringsfunktion; brus; Informations- och kommunikationsteknik; Information and Communication Technology;

   Abstract : Type-II Superlattice (T2SL) detectors have revolutionized the field of infraredimaging, establishing themselves as the forefront technology in defense, space,and industrial applications. These detectors enable larger formats and higheroperating temperatures (HOT) that minimize the need for bulky and energyconsumingcryogenic cooling, paving the way for imaging systems with reducedSize, Weight, and Power (SWaP). READ MORE

7. 5. Adventures of III-V Semiconductor Surfaces

   Author : Sandra Benter; NanoLund: Centre for Nanoscience; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; III-V; semiconductor surfaces; Bismuth; InAs; GaAs; droplets; STM; XPS; XPEEM; ARPES; Fysicumarkivet A:2023:Benter;

   Abstract : Tailoring the surface composition and morphology of materials to enable new electronic devices is important for a wide range of applications such as quantum computing or spintronics. A fundamental understanding of the changes induced in the surface during different process steps can help to establish new synthesis routes as well as devices. READ MORE