Search for dissertations about: "InAs substrate"

Showing result 1 - 5 of 35 swedish dissertations containing the words InAs substrate.

  2. 1. Growth, Physics, and Device Applications of InAs-based Nanowires

    Author : Linus Fröberg; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; field effect transistors; Low-dimensional structures; nanowires; chemical beam epitaxy; heterostructures; III-V; InP; InAs; quantum dots; gate all-around; wrap gate;

    Abstract : This thesis is based on three different projects: 1) the epitaxial growth of nanowires using chemical beam epitaxy, 2) the study of electron transport through quantum dots and multiple quantum dots in nanowires at low temperature, and 3) the development of wrap gated nanowire field effect transistors. In the first part, a method of studying the diffusion of the source material on the substrate surface was developed. READ MORE

  4. 2. Novel Terahertz Emitters and Detectors: InGaAs Slot Diodes and InAs Self-Switching Diodes

    Author : Andreas Westlund; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; InAs; InGaAs; slot diode; self-switching diode; zero-bias diode;

    Abstract : Two novel types of diodes for emission and detection of THz radiation have been investigated. The diodes are based on high electron mobility III-V heterostructures. Both diodes are aimed for room-temperature operation, for which there is a demand for new THz technology. For emission, slot diodes based on an InGaAs heterostructure were studied. READ MORE

  5. 3. Photoelectron Spectroscopy Studies of III-V Semiconductor Systems

    Author : Henric Åsklund; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; low temperature MBE; GaAs 111 A; InAs; core-level; GaMnAs; photoelectron spectroscopy; MEE; GaAs; InP 110 :As; valence-band; core-exciton; diluted magnetic semiconductor; MBE; interface; III-V semiconductor; surface; InAs 111 A; thin films;

    Abstract : Photoelectron spectroscopy has been used as a main tool to study a number of III-V semiconductor surfaces. This thesis includes studies of a surface reaction, As/InP(110), thin heteroepitaxial layers, InAs on GaAs(111)A and GaAs on AlAs(100), and a diluted magnetic semiconductor, Ga1-xMnxAs. READ MORE

  6. 4. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

    Author : Giuseppe Moschetti; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; metamorphic; high frequency; high electron mobility transistor HEMT ; low power; low noise.; InAs AlSb;

    Abstract : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. READ MORE

  7. 5. A study on InAs/Ga1-χ-InχSb superlattices

    Author : Jöran H. Roslund; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Si-doping of Ga1- #967; < sub>-In #967; < sub>Sb; solderless substrate mounting; < sub>Sb superlattices; InAs Ga1- #967; envelope-function calculations; molecular-beam epitaxy; < sub>-In #967;

    Abstract : .... READ MORE