Search for dissertations about: "InN"

Showing result 1 - 5 of 34 swedish dissertations containing the word InN.

  2. 1. Structural and elastic properties of InN and InAlN with different surface orientations and doping

    Author : Mengyao Xie; Vanya Darakchieva; Jens Birch; Enrique Calleja; Linköpings universitet; []
    Keywords : ;

    Abstract : Group–III nitrides, InN, GaN, AlN, and their alloys, have revolutionized solid state lighting and continue to attract substantial research interest due to their unique properties and importance for optoelectronics and electronics. Among the group–III nitrides, InN has the lowest effective electron mass and the highest electron mobility, which makes it suitable for high–frequency and high power devices. READ MORE

  4. 2. A Study of Group 13-Nitride Atomic Layer Deposition : Computational Chemistry Modelling of Atomistic Deposition Processes

    Author : Karl Rönnby; Lars Ojamäe; Henrik Pedersen; Simon Elliott; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : The crystalline solids aluminium nitride (AlN), gallium nitride (GaN) and indium nitride (InN), together with their alloys, are of huge interest in the semiconductor industry. Their bandgaps span an extensive range from 6.0 eV for AlN to 0.7 eV for InN, with GaN in between at a bandgap of 3. READ MORE

  5. 3. Time-resolved CVD of Group 13-Nitrides

    Author : Polla Rouf; Henrik Pedersen; Urban Forsberg; Nathan O´brien; Ola Nilsen; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Group 13 nitrides (AlN, GaN and InN) and their alloys are semiconductor materials with a wide bandgap span covering from UV down to IR range. Their excellent electronic properties make them extremely attractive materials for light emitting diodes (LEDs) and different kind of transistor structures, especially high electron mobility transistors (HEMTs). READ MORE

  6. 4. Optical Characterization of III-Nitride and II-V Semiconductor Nanowires

    Author : David Lindgren; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; III-Nitride; III-V; Fysicumarkivet A:2014:Lindgren; Semiconductor; Nanowire; Photoluminescence; Cathodoluminescence;

    Abstract : The optical properties of III-V semiconductor nanowires for optical devices have been investigated by photoluminescence spectroscopy, cathodoluminescence spectroscopy and cathodoluminescence imaging. The material systems that have been studied include the nitrides (InN, GaN and AlN) and ternaries, and a few common phosphides and arsenides. READ MORE

  7. 5. Epitaxy of group III-nitride materials using different nucleation schemes

    Author : Rosalia Delgado Carrascon; Vanya Darakchieva; Daniela Gogova; Alice Hospodková; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Group III-nitride materials, gallium nitride (GaN), aluminum nitride (AlN) and indium nitride (InN) have direct band gaps with band gap energies ranging from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN) wave-lengths, covering the entire spectral range from 0.7 eV to 6.2 eV upon alloying. READ MORE