Search for dissertations about: "InP 110 :As"

Showing result 1 - 5 of 16 swedish dissertations containing the words InP 110 :As.

2. 1. Photoelectron Spectroscopy Studies of III-V Semiconductor Systems

   Author : Henric Åsklund; Chalmers tekniska högskola; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; low temperature MBE; GaAs 111 A; InAs; core-level; GaMnAs; photoelectron spectroscopy; MEE; GaAs; InP 110 :As; valence-band; core-exciton; diluted magnetic semiconductor; MBE; interface; III-V semiconductor; surface; InAs 111 A; thin films;

   Abstract : Photoelectron spectroscopy has been used as a main tool to study a number of III-V semiconductor surfaces. This thesis includes studies of a surface reaction, As/InP(110), thin heteroepitaxial layers, InAs on GaAs(111)A and GaAs on AlAs(100), and a diluted magnetic semiconductor, Ga1-xMnxAs. READ MORE

4. 2. Electronic Structure of Some Zincblende Semiconductor Surfaces

   Author : Yousef Omar Khazmi; Chalmers tekniska högskola; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; CdTe; valence band; InP; tight-binding; core level; superlattice; surface; Green s function; adsorbates; semiconductor; GaAs; photoemission; electronic structure;

   Abstract : The main aim of this thesis is to study and understand the surface electronic structure of compound semiconductors (ex. GaAs, InP, ..etc. READ MORE

5. 3. Millimeter and Sub-Millimeter Wave Integrated Active Frequency Down-Converters

   Author : Yu Yan; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 145 GHz; self-oscillating mixer; mixer; conversion gain; millimeter wave; radar; mHEMT; noise figure; monolithic; sub-millimeter wave; InP; THz; resistive mixer; Gilbert mixer; DHBT; SiGe; 340 GHz; 220 GHz; FMCW; transconductance mixer; BiCMOS; transceiver; harmonic; GaAs;

   Abstract : In recent years, the increasing amount of data transmission, the need for automotiveradars, and standoff imaging for security applications are the main factors that accelerateresearch in the millimeter and sub-millimeter wave frequency ranges. The semiconductorindustries have continuously developed their processes, which have opened upopportunities for manufacturing monolithically integrated circuits up to a few hundredGHz, based on transistor technologies. READ MORE

6. 4. Non-galvanic Interconnects for Millimeter-wave Systems

   Author : Ahmed Adel Hassona; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interconnects; THz; taper; waveguide transition; MMIC; InP; WR-6.5.; slot antenna; CMOS; eWLB; LTSA; finline; millimeter-wave; SiC; D-band; GaAs;

   Abstract : Fueled by the increasing demand for higher data rates, millimeter-wave (mmW) systems emerged as a candidate that can provide multi-gigabit per second (Gb/s) transmission. This demand is mainly driven by modern communication systems and several other wireless and sensing applications such as production quality inspection and imaging systems. READ MORE

7. 5. Silicon micromachined waveguide components for terahertz systems

   Author : Bernhard Beuerle; Joachim Oberhammer; Umer Shah; Kamal Sarabandi; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; micromachining; waveguide; terahertz; deep reactive ion etching; silicon on insulator; on-wafer characterization; InP; SiGe; Electrical Engineering; Elektro- och systemteknik;

   Abstract : This thesis presents silicon micromachined waveguide components for sub-terahertz and terahertz (THz) systems fabricated by deep reactive ion etching (DRIE). Historically the main driving force for the development of THz systems has been space-based scientific instruments for astrophysics, planetary and Earth science missions. READ MORE