Search for dissertations about: "InP InGaAs"

Showing result 1 - 5 of 36 swedish dissertations containing the words InP InGaAs.

  2. 1. Scaling of InGaAs/InAlAs and InAs/AlSb HEMTs for microwave/mm-wave applications

    Author : Malin Borg; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; metamorphic; InGaAs; gate length; pseudomorphic; InAs; AlSb; InP; Schottky layer; High electron mobility transistor HEMT ; drain bias;

    Abstract : The InGaAs/InAlAs high electron mobility transistor (HEMT) offers the highest maximum frequency of oscillation fmax and the lowest noise performance (NFmin) for microwave/mm-wave receivers. Similar to other device technologies, the performance of the InGaAs/InAlAs HEMT has gradually been improved by device scaling. READ MORE

  4. 2. Long-Wavelength Vertical-Cavity Lasers : Materials and Device Analysis

    Author : Sebastian Mogg; KTH; []
    Keywords : VCL; VCSEL; vertical-cavity laser; semiconductor laser; long-wavelength; DBR; characterization; analysis; InP; InGaAs; quantum well; numerical modeling;

    Abstract : Vertical-cavity lasers (VCLs) are of great interest as lightsources for fiber-optic communication systems. Such deviceshave a number of advantages over traditional in-plane laserdiodes, including low power consumption, efficient fibercoupling, on-chip testability, as well as potential low-costfabrication and packaging. READ MORE

  5. 3. RF and Noise Optimization of Pseudomorphic inP HEMT Technology

    Author : Mikael Malmkvist; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; fabrication; high electron mobility transistor HEMT ; optimization; Schottky layer; InAlAs; Indium phosphide InP ; MMIC.; noise; pseudomorphic; modeling; InGaAs;

    Abstract : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the electronic device utilized for the highest frequency and/or the lowest noise applications known to date for analog transistor-based circuits. Hence it is of both scientific and technological interest to explore the InP HEMT for even further improvement in device performance. READ MORE

  6. 4. Radio Frequency InGaAs MOSFETs

    Author : Navya Sri Garigapati; NanoLund: Centre for Nanoscience; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-V compound semiconductor; InGaAs MOSFET; Quantum well; Nanowire; Radio Frequency; Band structure calculation; k.p calculations; Strain engineering; ballistic electron transport; S-parameters;

    Abstract : III-V-based Indium gallium arsenide is a promising channel material for high-frequency applications due to its superior electron mobility property. In this thesis, InGaAs/InP heterostructure radio frequency MOSFETs are designed, fabricated, and characterized. READ MORE

  7. 5. InP HEMT Technology and Applications

    Author : Anders Mellberg; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Indium phosphide InP ; cryogenic LNA; high electron mobility transistor HEMT ; metal-insulator-metal capacitor; MODFET; thin film resistor; semiconductor device fabrication; MMIC;

    Abstract : Indium phosphide high electron mobility transistors (InGaAs/InAlAs/InP HEMTs) exhibit the highest cut-off frequencies and the lowest microwave noise figures of all transistor technologies. Both InP HEMT technology and associated circuit demonstrators are therefore interesting to explore further. READ MORE