Search for dissertations about: "InP on Si"

Showing result 1 - 5 of 28 swedish dissertations containing the words InP on Si.

  2. 1. Plasma assisted low temperature semiconductor wafer bonding

    Author : Donato Pasquariello; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; Wafer Bonding; Oxygen Plasma; InP; Si; Semiconductor; Materialvetenskap; Materials science; Teknisk materialvetenskap; materialvetenskap; Materials Science;

    Abstract : Direct semiconductor wafer bonding has emerged as a technology to meet the demand foradditional flexibility in materials integration. The applications are found in microelectronics, optoelectronics and micromechanics. For instance, wafer bonding is used to produce silicon-on-insulator (SOI) wafers. READ MORE

  4. 2. InP DHBT Amplifiers and Circuit Packaging up to Submillimeter-Wave Frequencies

    Author : Klas Eriksson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; InP; WR05; packaging; noise figure; substrate modes; WR03.; multiple layer interconnect; double heterojunction bipolar transistor DHBT ; G-band; wideband; H-band; waveguide transition; distributed amplifier DA ; millimeter-wave; amplifier; low-noise amplifier LNA ; membrane technology; waveguide module; submillimeter-wave;

    Abstract : This thesis treats the design and characterization of amplifiers operating up tosubmillimeter-wave frequencies and packaging of such circuits into waveguidemodules. The circuits use an advanced indium phosphide (InP) double heterojunctionbipolar transistor (DHBT) process with a multilayer back-end. READ MORE

  5. 3. High-quality InP on Si and concepts for monolithic photonic integration

    Author : Carl Junesand; Sebastian Lourdudoss; Wolfgang Stolz; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Abstract : As the age of Moore’s law is drawing to a close, continuing increase in computing performance is becoming increasingly hard‐earned, while demand for bandwidth is insatiable. One way of dealing with this challenge is the integration of active photonic material with Si, allowing high‐speed optical inter‐ and intra‐chip connects on one hand, and the economies of scale of the CMOS industry in optical communications on the other. READ MORE

  6. 4. New Methods in the growth of InP on Si and Regrowth of Semi-insulating InP for Photonic Devices

    Author : Wondwosen Tilahun Metaferia; Sebastian Lourdudoss; Eric Tournié; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Abstract : This thesis addresses new methods in the growth of indium phosphide on silicon for enabling silicon photonics and nano photonics as well as efficient and cost-effective solar cells. It also addresses the renewal of regrowth of semi-insulating indium phosphide for realizing buried heterostructure quantum cascade lasers with high power and wall plug efficiency for sensing applications. READ MORE

  7. 5. Epitaxial III-V/Si heterojunctions for photonic devices

    Author : Giriprasanth Omanakuttan; Sebastian Lourdudoss; Yanting Sun; Harri Lipsanen; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; epitaxy; heterojunction; III-V on Si integration; solar cell; Fysik; Physics;

    Abstract : Monolithic integration of III-V materials on silicon is of great interest for efficient electronic-photonic integrated devices and multijunction solar cells on silicon. However, defect formation in the heteroepitaxial layers due to lattice mismatch, thermal mismatch, and polarity mismatch makes it a great challenge. READ MORE