Search for dissertations about: "Metal-Oxide Interface"

Showing result 1 - 5 of 64 swedish dissertations containing the words Metal-Oxide Interface.

  2. 1. Polyethylene – metal oxide particle nanocomposites for future HVDC cable insulation : From interface tailoring to designed performance

    Author : Dongming Liu; Ulf Gedde; Mikael Hedenqvist; Richard Olsson; Linda Schadler; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; HVDC; electrical insulation; core-shell nanoparticles; surface modification; silane chemistry; nanocomposites; polyethylene; adsorption; long-term stability; interface; particle dispersion; cavitation; conductivity; HVDC; elektrisk isolation; ytmodifiering; silankemi; nanokompositer; polyeten; adsorption; långtidsstabilitet; ytskikt; partikeldispergering; kavitation; ledningsförmåga; Fiber- och polymervetenskap; Fibre and Polymer Science;

    Abstract : Low-density polyethylene (LDPE) nanocomposites containing metal oxide nanoparticles are considered as promising candidates for insulating materials in future high-voltage direct-current (HVDC) cables. The significant improvement in dielectric properties compared with unfilled polymer is attributed to the large and active interface between the nanoparticles and the polymer. READ MORE

  4. 2. Nanostructured Metal Oxide Semiconductors for Functional Applications

    Author : Anton Landström; Isabella Concina; Alberto Vomiero; Caterina Soldano; Luleå tekniska universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Experimentell fysik; Experimental Physics;

    Abstract : This thesis is about nanostructured metal oxides, their properties, and some of their applications. Semiconducting metal oxides like TiO2, ZnO,and SnO2 have a wide band gap, which means they absorb UV light andgenerate electron-hole pairs. READ MORE

  5. 3. Detection and removal of traps at the SiO2/SiC interface

    Author : Halldor Olafsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interface states; thermally stimulated current TSC ; positron annihilation spectroscopy PAS ; silicon carbide SiC ; metal-oxide-semiconductor field-effect transistor MOSFET ; transmission electron microscopy TEM ; deep level transient spectroscopy DLTS ; metal-oxide-semiconductor MOS ; field-effect mobility; capacitance-voltage C-V ;

    Abstract : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. READ MORE

  6. 4. Surface and Interface Studies of ZnO using Reactive Dynamics Simulation

    Author : David Raymand; Kersti Hermansson; Daniel Spångberg; Kai Nordlund; Uppsala universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; catalysis; molecular dynamics; force-fields; metal oxide; ZnO; dynamical effects on reactivity; Inorganic chemistry; Oorganisk kemi; Kemi med inriktning mot oorganisk kemi; Chemistry with specialization in Inorganic Chemistry;

    Abstract : About 90% of all chemicals are produced with the help of catalysts, substances with the ability to accelerate reactions without being consumed. Metal oxides play a prominent role in catalysis, since they are able to act reversibly in many chemical processes. Zink oxide (ZnO) is used to catalyse a number of industrially important reactions. READ MORE

  7. 5. Ultrathin Oxides in Metal-Oxide-Silicon Structures: Defects and Characterization

    Author : Lars-Åke Ragnarsson; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; PMA; interface state densities; silicon; aluminum oxide; Pb; ultrathin; RPECVD; MOS;

    Abstract : The properties of metal-oxide-silicon (MOS) structures with ultrathin oxide layers (15-30 Å) have been investigated by means of electrical characterization. The characterization methods used were mainly capacitance voltage (C-V), current voltage (I-V) and constant voltage stress (I-t) measurements. READ MORE