Search for dissertations about: "NATURVETENSKAP Fysik Kondenserade materiens fysik Halvledarfysik"
Showing result 1 - 5 of 43 swedish dissertations containing the words NATURVETENSKAP Fysik Kondenserade materiens fysik Halvledarfysik.
-
1. Epitaxial Growth and Design of Nanowires and Complex Nanostructures
Abstract : This thesis describes the epitaxial growth of III-V semiconductor nanowires using Au seed particles, and the design of more complex three-dimensional branched structures from these wires. Growth was performed by metallorganic vapour phase epitaxy, in which precursor molecules for the semiconductor material components are introduced in a low-pressure vapour. READ MORE
-
2. UHV-CVD growth of Ge/Si nanostructures
Abstract : This thesis is based on the results concerning the epitaxial growth and characterization of silicon (Si) and germanium (Ge) nanostructures. The growth technique was the Ultra High Vacuum Chemical Vapor Deposition (UHV-CVD) that works in relatively low temperatures and low growth pressures. READ MORE
-
3. Nanoscale Crystal Growth: The Importance of Interfaces and Phase Boundaries Kristallväxt på Nanometer Skala: Vikten av Ytor och Gränser
Abstract : Surfaces and interfaces have a special significance to nanotechnology because the surface/volume ratio of nanomaterials is larger than for bulk materials. Therefore, interfaces of nanomaterials are usually more important to the properties of nanomaterials than for larger scale materials. READ MORE
-
4. Optical Studies and Applications of Single Quantum Dots
Abstract : The luminescence from single quantum dots has been studied. Single dot photoluminescence was studied under continuous as well as under pulsed excitation. Time-resolved studies revealed fast relaxations in quantum dots. The time resolved measurements were fitted with a set of rate equations. READ MORE
-
5. Effects of the Spin-Orbit Interaction on Transport and Optical Properties of III-V Semiconductor Quantum Wells
Abstract : Effects of the intrinsic electron spin-orbit interaction on transport and optical properties of III-V semiconductor quantum wells have been studied theoretically. It is shown that due to crystal anisotropy of this interaction, the weak localization magnetoresistance in a magnetic field parallel to interfaces is very sensitive to the epitaxy growth direction and also to the orientation of the magnetic field with respect to the crystal axes. READ MORE