Search for dissertations about: "Nanowire electronic"
Showing result 1 - 5 of 87 swedish dissertations containing the words Nanowire electronic.
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1. Nanowire Superinductors
Abstract : In this thesis, we demonstrate that a disordered superconductor with a high kinetic inductance can realize a low microwave loss, non-dissipative circuit element with an impedance greater than the quantum resistance (Rq = h/4e^2 = 6.5kΩ). READ MORE
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2. III–V Nanowire Surfaces
Abstract : This dissertation deals with the geometric and electronic structure of surfaces on III–V semiconductor nanowires (NWs). NWs made of InAs, GaAs, and InP have been studied using scanning tunneling microscopy/spectroscopy (STM/S), low energy electron microscopy (LEEM), photoemission electron microscopy (PEEM), and x-ray photoelectron spectroscopy (XPS). READ MORE
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3. InAs Nanowire Devices and Circuits
Abstract : Since the introduction of the transistor and the integrated circuit, the semiconductor industry has developed at a remarkable pace. By continuously fabricating smaller and faster transistors, it has been possible to maintain an exponential increase in performance, a phenomenon famously described by Moore’s Law. READ MORE
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4. Vertical III-V Nanowire MOSFETs
Abstract : Vertical III-V nanowire MOSFETs are interesting candidates for future digital and analog applications. High electron velocity III-V materials allow fabrication of low power and high frequency MOSFETs. Vertical vapor-liquid-solid growth enables fabrication of axial and radial heterostructure nanowires. READ MORE
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5. Electrical Characterisation of III-V Nanowire MOSFETs
Abstract : The ever increasing demand for faster and more energy-efficient electricalcomputation and communication presents severe challenges for the semiconductor industry and particularly for the metal-oxidesemiconductorfield-effect transistor (MOSFET), which is the workhorse of modern electronics. III-V materials exhibit higher carrier mobilities than the most commonly used MOSFET material Si so that the realisation of III-V MOSFETs can enable higher operation speeds and lower drive voltages than that which is possible in Si electronics. READ MORE