Search for dissertations about: "NiSi"

Showing result 1 - 5 of 11 swedish dissertations containing the word NiSi.

2. 1. 'Nisi temere agat' : Francisco Suárez on Final Causes and Final Causation

   Author : Erik Åkerlund; Tomas Ekenberg; Henrik Lagerlund; Pauliina Remes; Helen Hattab; Uppsala universitet; []
   Keywords : HUMANIORA; HUMANITIES; Francisco Suárez; final causes; causality; ontology; metaphysics; intentionality; Francisco Suárez; ändamålsorsaker; kausalitet; ontologi; metafysik; intentionalitet; Philosophy; with specialization in history of philosophy; Filosofi med filosofihistorisk inriktning;

   Abstract : The main thesis of this dissertation is that final causes are beings of reason (‘entia rationis’) in the philosophy of Francisco Suárez (1547-1617). The rejection of final causes is often seen as one of the hallmarks of Early Modern philosophy, marking the transition from an earlier Aristotelian tradition. READ MORE

4. 2. Integration of metallic source/drain contacts in MOSFET technology

   Author : Jun Luo; Mikael Östling; Shi-Li Zhang; Anthony O'Neill; KTH; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; CMOS technology; MOSFET; Schottky barrier MOSFET; metallic source drain; contact resistivity; NiSi; PtSi; SALICIDE; ultrathin silicide; FinFET; Semiconductor physics; Halvledarfysik;

   Abstract : The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. READ MORE

5. 3. Interaction of Ni with SiGe for electrical contacts in CMOS technology

   Author : Johan Seger; Shi-Li Zhang; Christian Lavoie; KTH; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; Physics; MOSFET; NiSi; SiGe; phase formation; morphological stability; Fysik; Physics; Fysik;

   Abstract : This thesis investigates the reactive formation of Ni mono-gernanosilicide, NiSi1-uGeu, for contact metallization of future CMOS devices where Si1-xGex can be present in the gate, source and drain of a MOSFET. Although the investigation has been pursued with a strong focus on materials aspects, issues related to process integration in MOSFETs both on conventional bulk Si and ultra-thin body SOI have been taken into consideration. READ MORE

6. 4. Fabrication, characterization, and modeling of metallic source/drain MOSFETs

   Author : Valur Gudmundsson; Per-Erik Hellström; Yee-Chia Yeo; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metallic source drain; contact resistivity; Monte Carlo; NiSi; PtSi; SOI; UTB; tri-gate; FinFET; multiple-gate; nanowire; MOSFET; CMOS; Schottky barrier; silicide; SALICIDE;

   Abstract : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). READ MORE

7. 5. Towards the Limits of Nonlinearity Compensation for Fiber-Optic Channels

   Author : Naga Vishnukanth Irukulapati; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Viterbi algorithm; fiber-optic channel; stochastic digital backpropagation; performance limits; factor graphs; near-MAP detector; Digital backpropagation; nonlinear compensation; mutual information;

   Abstract : The performance of long-haul coherent optical systems is fundamentally limited by fiber nonlinearity and its interplay with chromatic dispersion and noise. Due to nonlinearity, the signal propagating through the fiber interacts with itself and with the noise generated from the inline amplifiers. READ MORE