Search for dissertations about: "QUANTUM-WELL STATES"

Showing result 1 - 5 of 18 swedish dissertations containing the words QUANTUM-WELL STATES.

2. 1. Efficient 1.3 mm GaInNAs Quantum Well Lasers for Uncooled, High Speed Operation

   Author : Yongqiang Wei; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; semiconductor laser; uncooled; temperature dependence; modulation; quantum well; molecular beam epitaxy; high speed; GaInNAs;

   Abstract : The rapid expansion of tele and data transmission systems requires an ever increasing capacity in modern optical fibre communication networks. With the implementation of short distance, high density networks, such as access networks, there is a need for cost-effective optical transmitters compatible with single mode fibres. READ MORE

4. 2. Optical Characterization of GaN/AIGaN Quantum Well Structures

   Author : Hamid Haratizadeh; Tatiana Shubina; Linköpings universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES;

   Abstract : The III-nitride material family is particularly well suited for optoelectronic applications, e.g. as UV light emitters in future lighting solutions that are expected to replace the incandescent and fluorescent lamps in use today. READ MORE

5. 3. Resonant states in modulation-doped heterostructures

   Author : Anders Blom; Matematisk fysik; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; Mathematical and general theoretical physics; generation-recombination noise; THz laser; classical mechanics; relativity; quantum mechanics; statistisk fysik; gravitation; relativitet; kvantmekanik; klassisk mekanik; Matematisk och allmän teoretisk fysik; thermodynamics; termodynamik; statistical physics; donor energies; Si SiGe quantum well; central-cell effect; impurity absorption; Fysicumarkivet A:2003:Blom; Resonant states; impurity levels;

   Abstract : This thesis deals with the properties of donors placed inside or outside a heterostructure quantum well (QW). The focus of the investigation has been on the formation of resonant states, which are a hybridization of the discrete localized impurity levels and the continuous two-dimensional QW subbands. READ MORE

6. 4. III-V Devices for Emerging Electronic Applications

   Author : Patrik Olausson; NanoLund: Centre for Nanoscience; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy;

   Abstract : Today’s digitalized society relies on the advancement of silicon (Si) Complementary Metal Oxide Semiconductor (CMOS) technology, but the limitations of down-scaling and the rapidly increasing demand for added functionality that is not easily achieved in Si, have pushed efforts to monolithically 3D-integrate III-V devices above the Si-CMOS technology. In addition, the demand for increased computational power and handling of vast amounts of data is rapidly increasing. READ MORE

7. 5. Impact of carrier localization on recombination in InGaN quantum wells with nonbasal crystallographic orientations

   Author : Ruslan Ivanov; Saulius Marcinkevičius; Nicolas Grandjean; KTH; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; InGaN; quantum well; semipolar; nonpolar; near-field microscopy; carrier localization; carrier transport; optical polarization; Fysik; Physics;

   Abstract : The modern InGaN technology demonstrates high efficiencies only in the blue spectral region and low current operation modes. The growth of InGaN quantum wells (QWs) on nonbasal crystallographic planes (NBP) has potential to deliver high-power blue and green light emitting diodes and lasers. READ MORE