Search for dissertations about: "Si BJT"
Showing result 1 - 5 of 13 swedish dissertations containing the words Si BJT.
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1. Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors
Abstract : This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si1-xGex) films for high-speed bipolar transistors.In situdoping of polycrystalline silicon (poly-Si)using phosphine (PH3) and disilane (Si2H6) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. READ MORE
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2. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors
Abstract : Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. READ MORE
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3. Low phase noise voltage controlled micro- and millimeter wave oscillators
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4. Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors
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5. On Reliability of SiC Power Devices in Power Electronics
Abstract : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. READ MORE