Search for dissertations about: "SiC CVD"

Showing result 1 - 5 of 31 swedish dissertations containing the words SiC CVD.

  2. 1. Fluorinated SiC CVD

    Author : Pontus Stenberg; Erik Janzén; Henrik Pedersen; Angel Yanguas-Gil; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical vapor deposition (CVD) is the most prominent method to create the electrically active SiC epitaxial layers in the device. The process of growing such epitaxial layers is to use a hydrocarbon and silane diluted in hydrogen flow through a hot chamber where chemical reactions take place in such manner that Si and C finally deposit on the surface creating epitaxial SiC. READ MORE

  4. 2. CVD solutions for new directions in SiC and GaN epitaxy

    Author : Xun Li; Urban Forsberg; Erik Janzén; Henrik Pedersen; Sebastian Lourdudoss; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; CVD; SiC; GaN; epitaxy;

    Abstract : This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. READ MORE

  5. 3. Advances in SiC growth using chloride-based CVD

    Author : Stefano Leone; Anne Henry; Erik Janzén; Calvin H. Jr Carter; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : Silicon Carbide (SiC) is a wide band-gap semiconductor. Similar to silicon it can be used to make electronic devices which can be employed in several applications. SiC has some unique features, such as wide band-gap, high hardness, chemical inertness, and capability to withstand high temperatures. READ MORE

  6. 4. Deep levels in SiC

    Author : Franziska C. Beyer; Erik Janzén; Carl Hemmingsson; Jörg Weber; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for almost twenty years. Advances in SiC crystal growth especially the development of chemical vapor deposition (CVD) have enabled the fabrication of high quality material. READ MORE

  7. 5. Chloride-based Silicon Carbide CVD

    Author : Henrik Pedersen; Erik Janzén; Anne Henry; Yaroslav Koshka; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Chemistry; Kemi;

    Abstract : Silicon carbide (SiC) is a promising material for high power and high frequency devices due to its wide bandgap, high break down field and high thermal conductivity. The most established technique for growth ofepitaxial layers of SiC is chemical vapor deposition (CVD) at around 1550 °C using silane, SiH4, and lighthydrocarbons e g propane, C3H8, or ethylene, C2H4, as precursors heavily diluted in hydrogen. READ MORE