Search for dissertations about: "SiGe infrared"

Showing result 1 - 5 of 7 swedish dissertations containing the words SiGe infrared.

2. 1. Near-infrared photodetectors based on Si/SiGe nanostructures

   Author : Anders Elfving; Wei-Xin Ni; Thomas P. Pearsall; Linköpings universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; SiGe; Ge dots; nanostructures; molecular beam epitaxy; photodetector; Semiconductor physics; Halvledarfysik;

   Abstract : Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near infrared range at room temperature. READ MORE

4. 2. Application of SiGe(C) in high performance MOSFETs and infrared detectors

   Author : Mohammadreza Kolahdouz Esfahani; Henry Radamson; Ya-Hong Xie; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Germanium Carbon SiGeC ; Reduced Pressure Chemical Vapor Deposition RPCVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; bolometer; Quantum Well; Infrared IR Detection; Ni Silicide; High Resolution X-ray Diffraction HRXRD ; High Resolution Scanning Electron Microscopy HRSEM ; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

   Abstract : Epitaxially grown SiGe(C) materials have a great importance for many device applications. In these applications, (strained or relaxed) SiGe(C) layers are grown either selectively on the active areas, or on the entire wafer. READ MORE

5. 3. Design, Modelling and Characterization of Si/SiGe Structures for IR Bolometer Applications

   Author : Mahdi Moeen; Mikael Östling; Henry Radamson; Omer Nour; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Abstract : This thesis presents SiGe(C)/Si(C) multi quantum well (MQW) layers individually or in combination with Si(C) Schottky diodes as material structures to detect infrared (IR) radiation. The performance of devices was investigated in terms of SiGe/Si periodicity and quality of SiGe/Si interface. READ MORE

6. 4. Resonant states in modulation-doped heterostructures

   Author : Anders Blom; Matematisk fysik; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; Mathematical and general theoretical physics; generation-recombination noise; THz laser; classical mechanics; relativity; quantum mechanics; statistisk fysik; gravitation; relativitet; kvantmekanik; klassisk mekanik; Matematisk och allmän teoretisk fysik; thermodynamics; termodynamik; statistical physics; donor energies; Si SiGe quantum well; central-cell effect; impurity absorption; Fysicumarkivet A:2003:Blom; Resonant states; impurity levels;

   Abstract : This thesis deals with the properties of donors placed inside or outside a heterostructure quantum well (QW). The focus of the investigation has been on the formation of resonant states, which are a hybridization of the discrete localized impurity levels and the continuous two-dimensional QW subbands. READ MORE

7. 5. Optical characterization of Silicon-based self-assembled nanostructures

   Author : Bouchaib Adnane; Wei-Xin Ni; Per Olof Holtz; Göran Hansson; Susumo Fukatsu; Linköpings universitet; []
   Keywords : NATURAL SCIENCES; NATURVETENSKAP;

   Abstract : This PhD thesis summarizes the work carried on the optical characterizations of some Si-based self-assembled nanostructures, particularly SiGe/Si quantum dots (QDs) and nanocrystalline (nc)-Si embedded in mesoporous silica (MS) using photoconductivity (PC), photoluminescence (PL), and photoluminescence excitation (PLE) measurements. The spectroscopic studies of SiGe/Si QDs grown on Si by molecular beam epitaxy revealed for the first time well-resolved PLE resonances. READ MORE