Search for dissertations about: "SiGe infrared"
Showing result 1 - 5 of 7 swedish dissertations containing the words SiGe infrared.
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1. Near-infrared photodetectors based on Si/SiGe nanostructures
Abstract : Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near infrared range at room temperature. READ MORE
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2. Application of SiGe(C) in high performance MOSFETs and infrared detectors
Abstract : Epitaxially grown SiGe(C) materials have a great importance for many device applications. In these applications, (strained or relaxed) SiGe(C) layers are grown either selectively on the active areas, or on the entire wafer. READ MORE
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3. Design, Modelling and Characterization of Si/SiGe Structures for IR Bolometer Applications
Abstract : This thesis presents SiGe(C)/Si(C) multi quantum well (MQW) layers individually or in combination with Si(C) Schottky diodes as material structures to detect infrared (IR) radiation. The performance of devices was investigated in terms of SiGe/Si periodicity and quality of SiGe/Si interface. READ MORE
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4. Resonant states in modulation-doped heterostructures
Abstract : This thesis deals with the properties of donors placed inside or outside a heterostructure quantum well (QW). The focus of the investigation has been on the formation of resonant states, which are a hybridization of the discrete localized impurity levels and the continuous two-dimensional QW subbands. READ MORE
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5. Optical characterization of Silicon-based self-assembled nanostructures
Abstract : This PhD thesis summarizes the work carried on the optical characterizations of some Si-based self-assembled nanostructures, particularly SiGe/Si quantum dots (QDs) and nanocrystalline (nc)-Si embedded in mesoporous silica (MS) using photoconductivity (PC), photoluminescence (PL), and photoluminescence excitation (PLE) measurements. The spectroscopic studies of SiGe/Si QDs grown on Si by molecular beam epitaxy revealed for the first time well-resolved PLE resonances. READ MORE