Search for dissertations about: "Silicon Germanium"

Showing result 21 - 25 of 38 swedish dissertations containing the words Silicon Germanium.

  1. 21. SiGeC Heterojunction Bipolar Transistors

    Author : Erdal Suvar; KTH; []
    Keywords : Silicon-Germanium-Carbon SiGeC ; Heterojunction bipolar transistor HBT ; chemical vapor deposition CVD ; selective epitaxy; non-selective epitaxy; collector design; high-frequency measurement; dopant segregation; thermal stability;

    Abstract : Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. READ MORE

  2. 22. Spectroscopy along Decay Chains of Element 114, Flerovium

    Author : Anton Såmark-Roth; Kärnfysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Superheavy elements; Flerovium; Nuclear Structure; Spectroscopy; Alpha decay; Electromagnetic decay; Spontaneous fission; Germanium detectors; Fysicumarkivet A:2021:Såmark-Roth;

    Abstract : This thesis focusses on a nuclear spectroscopy experiment conducted to study α-decay chains stemming from isotopes of flerovium (element Z = 114). An upgraded TASISpec decay station was placed behind the gas-filled separator TASCA at the GSI Helmholtzzentrum für Schwerionenforschung in Darmstadt, Germany. READ MORE

  3. 23. Application of SiGe(C) in high performance MOSFETs and infrared detectors

    Author : Mohammadreza Kolahdouz Esfahani; Henry Radamson; Ya-Hong Xie; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Germanium Carbon SiGeC ; Reduced Pressure Chemical Vapor Deposition RPCVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; bolometer; Quantum Well; Infrared IR Detection; Ni Silicide; High Resolution X-ray Diffraction HRXRD ; High Resolution Scanning Electron Microscopy HRSEM ; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

    Abstract : Epitaxially grown SiGe(C) materials have a great importance for many device applications. In these applications, (strained or relaxed) SiGe(C) layers are grown either selectively on the active areas, or on the entire wafer. READ MORE

  4. 24. Hybrid fiber preform fabrication using CO laser heating

    Author : Taras Oriekhov; Michael Fokine; Cruz José; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Preform; CO laser; silicon-core fiber; semiconductor-core fiber; specialty fiber; optical fiber.; Optik och fotonik; Optics and Photonics;

    Abstract : This thesis describes the development of a new prototyping technique for specialty optical fibers and covers all the fabrication steps from preform to fiber. The technique allows to produce fibers of a custom core structure and material composition, mainly focusing on semiconductor core fibers. READ MORE

  5. 25. Copper germanide schottky contacts to silicon and electrically active defects in n-type 6H-SiC and 4H-SiC epitaxial layers

    Author : James P. Doyle; KTH; []
    Keywords : ;

    Abstract : Metallization for contacts to silicon devices presents amajor challenge as the linewidths are further reduced into thesub-micron regime. Copper germanide due to its relatively lowroom temperature resistivity ( ~ 10 µΩ - cm) has beenexamined as a potential contact metallixation. READ MORE