Search for dissertations about: "Spin Properties in InAs GaAs Quantum Dot based Nanostructures"
Found 2 swedish dissertations containing the words Spin Properties in InAs GaAs Quantum Dot based Nanostructures.
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1. Spin Properties in InAs/GaAs Quantum Dot based Nanostructures
Abstract : Semiconductor quantum dots (QDs) are a promising building block of future spin-functional devices for applications in spintronics and quantum information processing. Essential to the realization of such devices is our ability to create a desired spin orientation of charge carriers (electrons and holes), typically via injection of spin polarized carriers from other parts of the QD structures. READ MORE
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2. Optical properties of novel semiconductor nanostructures
Abstract : Semiconductor nanostructures, such as one-dimensional nanowires (NWs) and zerodimensional quantum dots (QDs), have recently gained increasing interest due to their unique physical properties that are found attractive for a wide variety of applications ranging from gas sensing and spintronics to optoelectronics and photonics. Here, especially promising are nanostructures based on compound semiconductors, including ZnO, GaNP and GaAs/InAs. READ MORE