Search for dissertations about: "Zhen Zhang"

Showing result 1 - 5 of 11 swedish dissertations containing the words Zhen Zhang.

2. 1. On the Low Frequency Noise in Ion Sensing

   Author : Da Zhang; Zhen Zhang; Shili Zhang; Hans Norström; Jörgen Olsson; Michel Calame; Uppsala universitet; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; low frequency noise; ion sensor; ISFET; electrochemical impedance spectroscopy; constant phase element; surface chemistry; CMOS technology; Engineering Science; Teknisk fysik;

   Abstract : Ion sensing represents a grand research challenge. It finds a vast variety of applications in, e.g., gas sensing for domestic gases and ion detection in electrolytes for chemical-biological-medical monitoring. READ MORE

4. 2. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

   Author : Zhen Zhang; Shi-Li Zhang; Tsu-Jae King Liu; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS technology; MOSFET; FinFET; Schottky diode; Schottky barrier soure drain; silicide; SALICIDE; SOI; multiple-gate; nanowire; sidewall transfer lithography; Electronics; Elektronik;

   Abstract : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. READ MORE

5. 3. Silicon Nanowire Field-Effect Devices as Low-Noise Sensors

   Author : Xi Chen; Zhen Zhang; Shi-Li Zhang; Si Chen; Fengnian Xia; Uppsala universitet; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon nanowire; field-effect transistor; Schottky junction gate; low frequency noise; ion sensor; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

   Abstract : In the past decades, silicon nanowire field-effect transistors (SiNWFETs) have been explored for label-free, highly sensitive, and real-time detections of chemical and biological species. The SiNWFETs are anticipated for sensing analyte at ultralow concentrations, even at single-molecule level, owing to their significantly improved charge sensitivity over large-area FETs. READ MORE

6. 4. Silicon Nanowire Based Electronic Devices for Sensing Applications

   Author : Qitao Hu; Zhen Zhang; Shi-Li Zhang; Si Chen; Jeehwan Kim; Uppsala universitet; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon nanowire; field-effect transistor; nanoelectromechanical resonator; CMOS-compatible; multiplexed detection; single charge detection; quantum sensing; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

   Abstract : Silicon nanowire (SiNW) based electronic devices fabricated with a complementary metal-oxide-semiconductor (CMOS) compatible process have wide-range and promising applications in sensing area. These SiNW sensors own high sensitivity, low-cost mass production possibility, and high integration density. READ MORE

7. 5. Contacts and Interconnects for Germanium-based Monolithic 3D Integrated Circuits

   Author : Lukas Jablonka; Zhen Zhang; Shi-Li Zhang; Fabrice Nemouchi; Uppsala universitet; []
   Keywords : Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

   Abstract : Three-dimensional integrated circuits have great potential for further increasing the number of transistors per area by stacking several device tiers on top of each other and without the need to continue the evermore complicated and expensive down-scaling of transistor dimensions. Among the different approaches towards the realization of such circuits, the monolithic approach, i. READ MORE