Search for dissertations about: "chemical beam epitaxy"

Showing result 1 - 5 of 17 swedish dissertations containing the words chemical beam epitaxy.

  2. 1. Low-temperature deposition of epitaxial transition metal carbide films and superlattices using C60 as carbon source

    Author : Hans Högberg; Uppsala universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Chemistry; fullerene; transition metals; carbides; low-temperature epitaxy; superlattices; Kemi; Chemistry; Kemi; Inorganic Chemistry; oorganisk kemi;

    Abstract : The transition metal carbides are chemical compounds with a unique set of propertiesused in many thin film applications. In this work, thin films of group 4-5 transitionmetal carbides and superlattices were deposited at low temperatures by simultaneousevaporation of C60 using either metal e-beam evaporation or d.c. magnetron sputtering. READ MORE

  4. 2. Transmission Electron Microscopy of Semiconductor Nanowires

    Author : Magnus Larsson; Centrum för analys och syntes; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Nanowires; magnetic resonance; supraconductors; magnetic and optical properties; electrical; Condensed matter:electronic structure; fasjämvikt; kristallografi; egenskaper termiska och mekaniska ; crystallography; phase equilibria; Kondenserade materiens egenskaper:struktur; akustik; Condensed matter:stucture; thermal and mechanical properties; optics; acoustics; Elektromagnetism; optik; Electromagnetism; Scanning Tunneling Microscopy; Nanomaterials; III-V Semiconductors; Transmission Electron Microscopy; Inorganic chemistry; Oorganisk kemi; relaxation; spectroscopy; Kondenserade materiens egenskaper:elektronstruktur; egenskaper elektriska; magnetiska och optiska ; supraledare; magnetisk resonans; spektroskopi; materialteknik; Material technology; Materiallära; Semiconductory physics; Halvledarfysik;

    Abstract : Semiconductor nanowires are studied by using transmission electron microscopy (TEM) based methods in this work. In the first section, the growth mechanism of gallium arsenide nanowires grown by chemical beam epitaxy is investigated. The nanowires are epitaxially grown from a gallium arsenide substrate by using gold seed particles as catalysts. READ MORE

  5. 3. Semiconductor Hetero- and Nanostructures

    Author : Jonas Ohlsson; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Heterostructures; Nanowhiskers; Semiconductory physics; Chemical Beam Epitaxy; Nanostructures; Halvledarfysik; Fysicumarkivet A:2001:Ohlsson;

    Abstract : In this thesis, chemical beam epitaxy was used to fabricate nm-sized crystalline structures. Most of the systems were based on heterostructures, i.e., combinations of different kinds of crystalline materials. READ MORE

  6. 4. Electron Transport in Semiconductor Nanowires

    Author : Mikael Björk; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; heterostructures; single electron transistors; resonant tunneling; quantum dots; weak antilocalization; Halvledarfysik; field effect transistors; Semiconductory physics; Fysicumarkivet A:2004:Björk; Low-dimensional structures; nanowires; chemical beam epitaxy;

    Abstract : In this thesis, semiconductor nanowires are studied from the point of view of growth and electrical properties. The growth of nanowires is done by chemical beam epitaxy (CBE), an ultra-high vacuum technique allowing a precise control of precursor deposition and low growth rates. READ MORE

  7. 5. Growth, Physics, and Device Applications of InAs-based Nanowires

    Author : Linus Fröberg; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; field effect transistors; Low-dimensional structures; nanowires; chemical beam epitaxy; heterostructures; III-V; InP; InAs; quantum dots; gate all-around; wrap gate;

    Abstract : This thesis is based on three different projects: 1) the epitaxial growth of nanowires using chemical beam epitaxy, 2) the study of electron transport through quantum dots and multiple quantum dots in nanowires at low temperature, and 3) the development of wrap gated nanowire field effect transistors. In the first part, a method of studying the diffusion of the source material on the substrate surface was developed. READ MORE