Search for dissertations about: "contact resistivity"
Showing result 1 - 5 of 38 swedish dissertations containing the words contact resistivity.
-
1. Thermally stable electrical contacts to 6H silicon carbide
Abstract : Silicon Carbide (SiC) are at present being developed for use in high temperature (≥ 500◦C) and high-power environments under which conventional semiconductors can hardly perform. Thermally stable electrical contacts are essential to the ability of SiC to function under such extreme conditions. READ MORE
-
2. Fabrication, characterization, and modeling of metallic source/drain MOSFETs
Abstract : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). READ MORE
-
3. Modeling and characterization of novel MOS devices
Abstract : Challenges with integrating high-κ gate dielectric,retrograde Si1-xGexchannel and silicided contacts in future CMOStechnologies are investigated experimentally and theoreticallyin this thesis. ρMOSFETs with either Si or strained Si1-xGex surface-channel and different high-κgate dielectric are examined. READ MORE
-
4. Source and drain engineering in SiGe-based pMOS transistors
Abstract : A new shallow junction formation process, based on selective silicon etching followed by selective growth of in situ B-doped SiGe, is presented. The approach is advantageous compared to conventional ion implantation followed by thermal activation, because perfectly abrupt, low resistivity junctions of arbitrary depth can be obtained. READ MORE
-
5. Integration of metallic source/drain contacts in MOSFET technology
Abstract : The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. READ MORE