Search for dissertations about: "cryogenic temperatures"
Showing result 1 - 5 of 48 swedish dissertations containing the words cryogenic temperatures.
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1. GaN-based HEMTs for Cryogenic Low-Noise Applications
Abstract : Radio-astronomy deals with signals and radiations of extremely weak intensity. Also, it requires robust and rugged technologies able to sustain and prevent the Radio Frequency Interferences (RFI). READ MORE
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2. Ultra-Low Noise InP HEMTs for Cryogenic Amplification
Abstract : InGaAs/InAlAs/InP High Electron Mobility Transistors (InP HEMTs), are today the best devices to design cryogenic low noise amplifiers. However, reported progress in reducing the noise has been slow in the last decade. READ MORE
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3. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications
Abstract : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. READ MORE
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4. Cryogenic Ultra-Low Noise InP High Electron Mobility Transistors
Abstract : Indium phosphide high electron mobility transistors (InP HEMTs), are today the best transistors for cryogenic low noise amplifiers at microwave frequencies. Record noise temperatures below 2 K using InP HEMT equipped cryogenic low noise amplifiers (LNAs) were demonstrated already a decade ago. READ MORE
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5. InP High Electron Mobility Transistor Design for Cryogenic Low Noise Amplifiers
Abstract : The InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) is the superior technology for the most demanding low-noise and high-speed microwave and millimeter-wave applications, in particular in radio astronomy and deep-space communication. InP HEMT has enabled cryogenic low noise amplifier (LNA) designs with noise temperatures about ten times the quantum noise limit from sub GHz up to 120 GHz. READ MORE