Search for dissertations about: "effect of frequency on"
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1126 swedish dissertations containing the words effect of frequency on.
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Author : Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
Keywords : silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;
Abstract :
Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. READ MORE
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Author : Muhammad Asad; Chalmers tekniska högskola; []
Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; high-frequency electronics; Graphene; transit frequency; contact resistance; MOGFETs; drift velocity; field-effect transistors; saturation velocity; maximum frequency of oscillation; diamond;
Abstract :
Transistors operating at high frequencies are the basic building blocks of millimeter wave communication and sensor systems. The high velocity and mobility of carriers in graphene can open ways for development of ultra-fast group IV transistors with similar or even better performance than that achieved with III-V based semiconductors. READ MORE
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Author : Saman Hosseinpour; Christofer Leygraf; Franz Geiger; KTH; []
Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Corrosion; copper; self assembled monolayer; sum frequency spectroscopy; qcm; gamma radiation;
Abstract :
Atmospheric corrosion indoors is of great practical importance for the degradation of metals, for example in electronics, military equipment, and cultural heritage items. It involves a wide range of chemical, electrochemical, and physical processes occurring in gas, liquid, and solid phases, and at the interfaces between them. READ MORE
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Author : Muhammad Asad; Chalmers tekniska högskola; []
Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; high frequency; Graphene; transit frequency; transconductance; maximum frequency of oscillation; contact resistance; microwave electronics; field-effect transistors;
Abstract :
Rapid development of wireless and internet communications requires development of new generation high frequency electronics based on new device concepts and new materials. The very high intrinsic velocity of charge carriers in graphene makes it promising new channel material for high frequency electronics. READ MORE
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Author : Mattias Sjöberg; KTH; []
Keywords : Rubber isolator; Dynamic stiffness; Nonlinear; Payne effect; Audible frequency; Fractional derivative; Mittag-Leffler function; Thermo-rheologically simple; Neo-Hooke;
Abstract :
This work aims at enhancing the understanding and to provideimproved models of the dynamic behavior of rubber vibrationisolators which are widely used in mechanical systems.Initially, a time domainmodel relating compressions tocomponent forces accounting for preload effects, frequency anddynamic amplitude dependence is presented. READ MORE
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