Search for dissertations about: "envelope-function calculations"

Found 4 swedish dissertations containing the words envelope-function calculations.

  2. 1. On the Growth and Properties of InAs/Ga1-xInxSb Superlattices and Related Materials

    Author : Jöran H. Roslund; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; molecular-beam epitaxy; InAs Ga1-xInxSb superlattices; envelope-function calculations; lattice-mismatched semiconductors; Si-doping of Ga1-xInxSb; type-II superlattices;

    Abstract : InAs/Ga1-xInxSb semiconductor superlattices and their constituent materials have been studied theoretically, grown by molecular-beam epitaxy and characterised by various techniques. InAs/Ga1-xInxSb superlattices are interesting for use in far-infrared detectors because of their narrow band gaps. READ MORE

  4. 2. A study on InAs/Ga1-χ-InχSb superlattices

    Author : Jöran H. Roslund; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Si-doping of Ga1- #967; < sub>-In #967; < sub>Sb; solderless substrate mounting; < sub>Sb superlattices; InAs Ga1- #967; envelope-function calculations; molecular-beam epitaxy; < sub>-In #967;

    Abstract : .... READ MORE

  5. 3. Theoretical and optical investigations of some III-V based quantum wells and modulation doped heterostructures

    Author : Thomas Lundström; Maurice S. Skolnick; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : This thesis is based on a combination of theoretical calculations and optical studies of the electronic structure and the radiative recombination processes in some III-V based quantum wells and ?-type modulation doped heterostructures. The optical studies includes photoluminescence (PL) spectroscopy, PL excitation (PLE) spectroscopy, and time-resolved PL. READ MORE

  6. 4. GaN/AlN Multiple Quantum Well Structures

    Author : Xinju Liu; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; GaN; AlN; multiple quantum well; Molecular beam epitaxy; Si 111 ; intersubband transition; sapphire; GaN template;

    Abstract : The III-nitride semiconductors: InN, GaN and AlN are promising for photonic, high power and high temperature electronic devices. Their large and direct band gaps cover the range 0.7 to 6.2 eV, i. READ MORE