Search for dissertations about: "field effect transistors"

Showing result 16 - 20 of 150 swedish dissertations containing the words field effect transistors.

  1. 16. Photo-polymerization as a tool for engineering the active material in organic field-effect transistors

    Author : Andrzej Dzwilewski; Ludvig Edman; Xavier Crispin; Umeå universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Field-effect transistor; photo-polymerization; PCBM; C60; Fullerene; Physics; Fysik; fasta tillståndets fysik; Solid State Physics;

    Abstract : The emergence of organic semiconductors is exciting since it promises to open up for straightforward and low-cost fabrication of a wide range of efficient and novel electronic devices. However, in order for this promise to become reality it is critical that new and functional fabrication techniques are developed. READ MORE

  2. 17. Tunnel Emitter Transistors

    Author : Erik Aderstedt; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TET; tunneling; siO2< sub>; tunnel emitter transistor; MOS; Ta2< sub>O5< sub>; silicon; high- #954; BICFET; dielectrics;

    Abstract : The Tunnel Emitter Transistor is based on the modulation of the tunnel current in a Metal Oxide Semiconductor (MOS) structure with an ultra-thin oxide layer. The modulation is accomplished by injecting charge to the oxide-semiconductor interface from a third terminal. READ MORE

  3. 18. Vertical III-V Nanowire Transistors for Low-Power Electronics

    Author : Abinaya Krishnaraja; Nanoelektronik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; metal-oxide-semiconductor field-effect transistor MOSFET ; Steep slope; Tunnel Field-Effect Transistors; Vertical nanowire; III-V materials; semiconducting III-V; InAs; GaSb; InGaAsSb; PMOS; Transistor; Electronics;

    Abstract : Power dissipation has been the major challenge in the downscaling of transistor technology. Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have struggled to keep a low power consumption while still maintaining a high performance due to the low carrier mobilities of Si but also due to their inherent minimum inverse subthreshold slope (S ≥ 60 mV/dec) which is limited by thermionic emission. READ MORE

  4. 19. Cryogenic InP High Electron Mobility Transistors in a Magnetic Field

    Author : Isabel Harrysson Rodrigues; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; magnetic field; cryogenic; low noise amplifier; angular dependence; InP HEMT; geometrical magnetoresistance;

    Abstract : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. In this thesis it is demonstrated that the InP HEMT, when placed in a magnetic field, has a strong angular dependence in its output current. READ MORE

  5. 20. Polyelectrolyte-Gated Organic Field Effect Transistors – Printing and Electrical Stability

    Author : Hiam Sinno; Magnus Berggren; Isak Engquist; Jan Linnros; Linköpings universitet; []
    Keywords : ;

    Abstract : The progress in materials science during recent decades along with the steadily growing desire to accomplish novel functionalities in electronic devices and the continuous strive to achieve a more efficient manufacturing process such as low‐cost robust high‐volume printing techniques, has brought the organic electronics field to light. For example, organic field effect transistors (OFETs) are the fundamental building blocks of flexible electronics. READ MORE