Search for dissertations about: "field-effect mobility"

Showing result 1 - 5 of 52 swedish dissertations containing the words field-effect mobility.

2. 1. Heterostructure Field Effect Transistors and Millimeter Wave Integrated Circuits

   Author : Niklas Rorsman; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; subharmonic; resistive mixer; Modulation Doped Field Effect Transistor MODFET ; heterostructure field effect transistor HFET ; monolithic microwave integrated circuits MMIC ; frequency multiplier; amplifier; III-V semiconductor; small signal model; electron beam lithography; High Electron Mobility Transistor HEMT ; large signal model; pseudomorphic;

   Abstract : This thesis deals with the research and development of HFETs and HFET based circuits. One of the main aims of the work presented in this thesis has been to develop processes to fabricate state of the art devices and circuits. READ MORE

4. 2. InP-based heterostructure field effect transistors and millimeter wave integrated circuits

   Author : Anders Mellberg; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; passive components; InP; MIM capacitor; high electron mobility transistor HEMT ; monolithic microwave integrated circuit MMIC ; CPW; TL; 2DEG; heterostructure field effect transistor HFET ; spiral inductor; modeling; wideband LNA; coplanar waveguides; microstrip transmission line; modulation doped field effect transistor MODFET ; III-V semiconductor; low noise amplifier; compound semiconductor; thin film resistor TFR ; indium phosphide; low noise amplifier;

   Abstract : .... READ MORE

5. 3. Effects of impurities on charge transport in graphene field-effect transistors

   Author : Marlene Bonmann; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; carrier transport; electron and hole mobility; impurities; traps; graphene; field-effect transistors; microwave devices; saturation velocity; remote phonons;

   Abstract : In order to push the upper frequency limit of high speed electronics further, thereby extending the range of applications, new device technologies and materials are continuously investigated. The 2D material graphene, with its intrinsically extremely high room temperature charge carrier velocity, is regarded as a promising candidate to push the frequency limit even further. READ MORE

6. 4. Graphene field-effect transistors and devices for advanced high-frequency applications

   Author : Marlene Bonmann; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; traps; graphene; self-heating; field-effect transistors; remote phonons; carrier transport; saturation velocity; microwave devices; impurities and defects;

   Abstract : New device technologies and materials are continuously investigated, in order to increase the bandwidth of high-speed electronics, thereby extending data rate and range of applications. The 2D-material graphene, with its intrinsically extremely high charge carrier velocity, is considered as a promising new channel material for advanced high frequency field-effect transistors. READ MORE

7. 5. Impact of adjacent dielectrics on the high-frequency performance of graphene field-effect transistors

   Author : Muhammad Asad; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; high-frequency electronics; Graphene; transit frequency; contact resistance; MOGFETs; drift velocity; field-effect transistors; saturation velocity; maximum frequency of oscillation; diamond;

   Abstract : Transistors operating at high frequencies are the basic building blocks of millimeter wave communication and sensor systems. The high velocity and mobility of carriers in graphene can open ways for development of ultra-fast group IV transistors with similar or even better performance than that achieved with III-V based semiconductors. READ MORE