Search for dissertations about: "gallium nitride laser"

Found 4 swedish dissertations containing the words gallium nitride laser.

  2. 1. Optical Guiding and Feedback in Gallium Nitride Based Vertical Cavity Surface Emitting Lasers

    Author : Seyed Ehsan Hashemi; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; antiguiding; vertical-cavity surface-emitting laser; gallium nitride laser; TiO2 high contrast grating;

    Abstract : The gallium-nitride (GaN) semiconductor material has been the core of the revolutionary breakthroughs during the last two decades in the lighting industry, by enabling manufacturing of efficient blue light emitting diodes (LEDs), for which the 2014 Nobel prize in physics was awarded. The GaN technology has further led to violet edge-emitting lasers (EELs), enabling the Blu-ray disk technology, and also to the commercialization of directly green emitting EELs. READ MORE

  4. 2. Hot-wall MOCVD of N-polar group-III nitride materials and high electron mobility transistor structures

    Author : Hengfang Zhang; Vanya Darakchieva; Jr-Tai Chen; Ingemar Persson; Fatemeh (Shadi) Shahedipour-Sandvik; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Nitrogen-polar; MOCVD; III-nitride; GaN; AlN; C-face SiC; HEMTs;

    Abstract : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). READ MORE

  5. 3. Hot-wall MOCVD of N-polar group-III nitride materials

    Author : Hengfang Zhang; Vanya Darakchieva; Jr-Tai Chen; Ingemar Persson; Elke Meissner; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). READ MORE

  6. 4. Growth of thick GaN layers on sapphire by Hydride Vapour Phase Epitaxy

    Author : Henrik Larsson; Werner Seifert; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : Gallium nitride (GaN) is a wide bandgap material that is already extensively used in industrial production of optoelectronic devices (light emitters) that operate in the blue and ultraviolet wavelength range. GaN is interesting not only because it has a wide bandgap (3. READ MORE