Search for dissertations about: "gate"

Showing result 1 - 5 of 428 swedish dissertations containing the word gate.

2. 1. Novel concepts for advanced CMOS : Materials, process and device architecture

   Author : Dongping Wu; KTH; []
   Keywords : CMOS technology; MOSFET; high-k; gate dielectric; ALD; surface pre-treatment; metal gate; poly-SiGe; strained SiGe; surface-channel; buried-channel; notched gate;

   Abstract : The continuous and aggressive dimensional miniaturization ofthe conventional complementary-metal-oxide semiconductor (CMOS)architecture has been the main impetus for the vast growth ofIC industry over the past decades. As the CMOS downscalingapproaches the fundamental limits, unconventional materials andnovel device architectures are required in order to guaranteethe ultimate scaling in device dimensions and maintain theperformance gain expected from the scaling. READ MORE

4. 2. Silicon nanowire based devices for More than Moore Applications

   Author : Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
   Keywords : silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

   Abstract : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. READ MORE

5. 3. Metal Gate Technology for Advanced CMOS Devices

   Author : Gustaf Sjöblom; Jörgen Olsson; Stefan de Gendt; Uppsala universitet; []
   Keywords : Electronics; metal gate; high-k dielectrics; titanium nitride; zirconium nitride; MOSFET; thin film; work function; XPS; Elektronik;

   Abstract : The development and implementation of a metal gate technology (alloy, compound, or silicide) into metal-oxide-semiconductor field effect transistors (MOSFETs) is necessary to extend the life of planar CMOS devices and enable further downscaling. This thesis examines possible metal gate materials for improving the performance of the gate stack and discusses process integration as well as improved electrical and physical measurement methodologies, tested on capacitor structures and transistors. READ MORE

6. 4. Field Programmable Gate Arrays and Reconfigurable Computing in Automatic Control

   Author : Carl Wilhelmsson; Förbränningsmotorer; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; systems analysis; FPGA; Field Programmable Gate Array; programming; Compendex: Field programmable gate arrays FPGA ; programming environments; computer science; programmable controllers; observers; adaptive control; modelling; closed loop systems; logic CAD; control systems; reconfigurable architectures; field programmable gate arrays; Computer Programming; telecommunication control; Control system applications; Real time control; Computer control systems; Control systems; Engine Control; Heat release analysis; Cylinder pressure; power-train control; Vehicle control; High speed; Rapid Prototyping; Combustion control; Automotive control; Control application; High frequency; Computer control; Feedback Control; Closed loop systems; Control; Reconfigurable computing; Reconfigurable hardware; VLSI; Closed loop control; programmable logic arrays; Automatic Control; System on Chip SoC ;

   Abstract : New combustion engine principles increase the demands on feedback combustion control, at the same time economical considerations currently enforce the usage of low-end control hardware limiting implementation possibilities. Significant development is simultaneously and continuously carried out within the field of Field Programmable Gate Arrays (FPGAs). READ MORE

7. 5. Ultrathin gate oxides for future SiGe CMOS devices

   Author : Alok Sareen; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; gate oxide; ultrathin; C-V; SiGe; valence band offset;

   Abstract : .... READ MORE