Search for dissertations about: "heterostructure field effect transistor"
Showing result 1 - 5 of 11 swedish dissertations containing the words heterostructure field effect transistor.
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1. Heterostructure Field Effect Transistors and Millimeter Wave Integrated Circuits
Abstract : This thesis deals with the research and development of HFETs and HFET based circuits. One of the main aims of the work presented in this thesis has been to develop processes to fabricate state of the art devices and circuits. READ MORE
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2. InP-based heterostructure field effect transistors and millimeter wave integrated circuits
Abstract : .... READ MORE
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3. Vertical III-V Nanowire Transistors for Low-Power Electronics
Abstract : Power dissipation has been the major challenge in the downscaling of transistor technology. Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have struggled to keep a low power consumption while still maintaining a high performance due to the low carrier mobilities of Si but also due to their inherent minimum inverse subthreshold slope (S ≥ 60 mV/dec) which is limited by thermionic emission. READ MORE
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4. Vertical III-V Semiconductor Devices
Abstract : This thesis is based on three projects that deal with vertical III-V semiconductor devices. The work spans over basic research as well as more applied aspects of III-V semiconductor technology. All projects have in common that they rely on advanced epitaxial growth to form the starting material for device fabrication. READ MORE
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5. Metall organic vapour phase epitaxy for advanced III-V devices
Abstract : Metalorganic vapour phase epitaxy (MOVPE) has proven to be a successful method for growth of structures for advanced optoelectronic semiconductor devices in III-V compounds. This thesis deals with technological and process related aspects of MOVPE from an experimental perspective. READ MORE