Search for dissertations about: "heterostructures"
Showing result 6 - 10 of 142 swedish dissertations containing the word heterostructures.
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6. Properties of Fe/ZnSe Heterostructures : A Step Towards Semiconductor Spintronics
Abstract : In the present thesis, the properties at ferromagnet/semiconductor interfaces, relevant for semiconductor spintronics applications, are addressed. Semiconductor spintronics refers to the possibility of storing information using the electron spin, additional to the electron charge, for enhanced flexibility in nanoscale semiconductor devices. READ MORE
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7. Optimization of Metamorphic Materials on GaAs Grown by MBE
Abstract : Advanced epitaxial technologies such as molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE) have enabled the idea of semiconductor heterostructures, which built up the foundation of the fast developing information and communication technology nowadays. Lattice mismatch has been a problem limiting designs of semiconductor heterostructures. READ MORE
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8. Semiconductor Hetero- and Nanostructures
Abstract : In this thesis, chemical beam epitaxy was used to fabricate nm-sized crystalline structures. Most of the systems were based on heterostructures, i.e., combinations of different kinds of crystalline materials. READ MORE
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9. High resolution microstructural characterization of oxide thin films and interfaces
Abstract : Oxide interfaces can introduce properties that are different compared to thecorresponding crystal bulk properties. The properties can be tuned by changing thestructure. It has become clear that these oxide interface systems are potentiallysuitable for future electronic devices with unique and tailored properties. READ MORE
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10. Growth, Physics, and Device Applications of InAs-based Nanowires
Abstract : This thesis is based on three different projects: 1) the epitaxial growth of nanowires using chemical beam epitaxy, 2) the study of electron transport through quantum dots and multiple quantum dots in nanowires at low temperature, and 3) the development of wrap gated nanowire field effect transistors. In the first part, a method of studying the diffusion of the source material on the substrate surface was developed. READ MORE