Search for dissertations about: "inas gaas"

Showing result 1 - 5 of 48 swedish dissertations containing the words inas gaas.

  1. 1. Photoelectron Spectroscopy Studies of III-V Semiconductor Systems

    University dissertation from Chalmers University of Technology

    Author : Henric Åsklund; Chalmers tekniska högskola.; Chalmers University of Technology.; [2001]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Fysik; Physics; photoelectron spectroscopy; III-V semiconductor; surface; thin films; interface; diluted magnetic semiconductor; valence-band; core-level; core-exciton; MBE; MEE; low temperature MBE; InP 110 :As; InAs; GaAs; GaAs 111 A; InAs 111 A; GaMnAs;

    Abstract : Photoelectron spectroscopy has been used as a main tool to study a number of III-V semiconductor surfaces. This thesis includes studies of a surface reaction, As/InP(110), thin heteroepitaxial layers, InAs on GaAs(111)A and GaAs on AlAs(100), and a diluted magnetic semiconductor, Ga1-xMnxAs. READ MORE

  2. 2. Epitaxial growth of semiconductor nanowires

    University dissertation from Department of Physics, Lund University

    Author : Ann Persson; Lunds universitet.; Lund University.; [2005]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; nanowires; materialteknik; nanostructures; growth mechanism; Materiallära; Material technology; Halvledarfysik; Semiconductory physics; nanoelectronics; Au; VSS; VLS; surface diffusion; band gap engineering; InP; ternary system; GaAs; heterostructures; InAs; CBE; epitaxy;

    Abstract : This thesis describes the results obtained from investigations carried out on epitaxially grown III-V semiconductor nanowires aimed at improving our understanding of and knowledge on the growth mechanism of nanowires. This is important to be able to control their growth, in order to make future applications possible. READ MORE

  3. 3. Optical Studies of InAs Quantum Dots in III-V Semiconductors

    University dissertation from Solid State Physics, Lund University

    Author : Lars Landin; Lunds universitet.; Lund University.; [2000]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; III-V semiconductors; quantum dots; k.p calculations; photoluminescence; deep-level transient spectroscopy; photoconductivity; few particle effect; single dot spectroscopy; InAs InP; Semiconductory physics; Halvledarfysik; Fysicumarkivet A:2000:Landin; InAs GaAs;

    Abstract : I this thesis, optical studies of InAs quantum dots (QDs) in GaAs and InP are presented. The electronic structure of these zero dimensional structures, grown in the Stranski-Krastanow growth mode, was studied by photoluminescence spectroscopy (PL), junction space-charge techniques (JSCT) and photoconductivity (PC) measurements. READ MORE

  4. 4. Spectroscopic studies of III-V semiconductors in two, one and zero dimensions

    University dissertation from Solid State Physics, Lund University

    Author : Dan Hessman; Lunds universitet.; Lund University.; [1996]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; low-dimensional structures; InAs-InP; quantum wells; quantum dots; quantum wires; k.p calculations; type-II; photoluminescence; V grooves; Stranski Krastanow; single dot spectroscopy; GaAs-InP; III-V semiconductors; Fysicumarkivet A:1996:Hessman; InAs-GaAs; GaInAs-InP; Halvledarfysik; InP-GaInP; Semiconductory physics;

    Abstract : In this thesis, spectroscopic studies of quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) in III-V semiconductors are presented. The electronic structure of these low-dimensional structures have been studied by absorption, photocurrent, electroreflectance, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. READ MORE

  5. 5. Atomic and Electronic Structure of III-V Semiconductor Surfaces

    University dissertation from Chalmers University of Technology

    Author : Örjan Olsson; Chalmers tekniska högskola.; Chalmers University of Technology.; [1996]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Fysik; Physics; semiconductor; surface; reconstruction; valence band; core level; photoelectron; InAs; InSb; GaAs; scanning tunneling microscopy;

    Abstract : The atomic and electronic structure of clean and Cs-perturbed III-V semiconductors was studied by angle-resolved photoelectron spectroscopy (ARPES), surface core level spectroscopy (SCLS), and scanning tunneling microscopy (STM). The work can be divided into three parts, dealing with low-index sur-faces, high-index surfaces, and special features of InAs. READ MORE