Search for dissertations about: "inas gasb"

Showing result 1 - 5 of 12 swedish dissertations containing the words inas gasb.

  1. 1. Electrical Characterization of Integrated InAs Nano-Structures

    University dissertation from Lund University (Media-Tryck)

    Author : Gvidas Astromskas; Lunds universitet.; Lund University.; [2010]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; DLTS; Fermi level pinning; epitaxial growth; threshold voltage; nanowire capacitance; overgrowth; Hall mobility; GaSb; InAs;

    Abstract : This thesis analyzes the electrical properties of InAs nano-structures, that are integrated into different materials and geometries. The thesis describes integration related issues of InAs, the epitaxial synthesis of the InAs nano-structures and summarizes experimental techniques for analysis of electrical properties of the integrated structures. READ MORE

  2. 2. Electrical Characterization of III-V Nanostructure

    University dissertation from Department of Electrical and Information Technology, Lund University

    Author : Aein Shiri Babadi; Lunds universitet.; Lund University.; [2016-10-17]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; High-κ; Metal-Oxide-Semicondcutor capacitors; MOSCAPs; III-V semiconductors; InAs; GaSb; interface traps; border traps; C-V; Simulations; Nanowire; MOSFET; Fabrication;

    Abstract : This thesis investigates the electronic properties of a number of novel III-V materials and material combinations for transistor applications. In particular, high-κ/InAs metal-oxide-semiconductor (MOS) structures and transport properties of GaSb nanowires have been studied. READ MORE

  3. 3. Electronic materials growth and characterisation

    University dissertation from Stockholm : KTH

    Author : Michael A. Grishin; KTH.; [2005]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrophysics; Photoemission; Ultra-short laser pulse; Thin film; Laser deposition; InSb; InAs; GaSb; Ferroelectrics; Elektrofysik; TECHNOLOGY Electrical engineering; electronics and photonics Electrophysics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik Elektrofysik;

    Abstract : In this thesis the InSb(111), InAs(111) and GaSb(001) surfaces have been studied by means of time- and angle-resolved photoemission spectroscopy based upon the femtosecond laser system. The pump-and-probe technique allows to analyse both electron states in the valence band and normally unpopulated electron states above the valence band, which can be occupied by transiently excited carriers at the optically pumped surface. READ MORE

  4. 4. Antimonide Heterostructure Nanowires - Growth, Physics and Devices

    University dissertation from Stockholm : KTH

    Author : Mattias Borg; Lunds universitet.; Lund University.; [2012]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; GaSb; InSb; epitaxy; Nanowires; antimonides; tunnel field effect transistors; tunnel diode; InAsSb; Fysicumarkivet A:2012:Borg;

    Abstract : Abstract in Undetermined This thesis investigates the growth and application of antimonide heterostructure nanowires for low-power electronics. In the first part of the thesis, GaSb, InSb and InAsSb nanowire growth is presented, and the distinguishing features of the growth are described. READ MORE

  5. 5. On the Growth and Properties of InAs/Ga1-xInxSb Superlattices and Related Materials

    University dissertation from Chalmers University of Technology

    Author : Jöran H. Roslund; Chalmers tekniska högskola.; Chalmers University of Technology.; [1997]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Fysik; Physics; InAs Ga1-xInxSb superlattices; type-II superlattices; envelope-function calculations; molecular-beam epitaxy; Si-doping of Ga1-xInxSb; lattice-mismatched semiconductors;

    Abstract : InAs/Ga1-xInxSb semiconductor superlattices and their constituent materials have been studied theoretically, grown by molecular-beam epitaxy and characterised by various techniques. InAs/Ga1-xInxSb superlattices are interesting for use in far-infrared detectors because of their narrow band gaps. READ MORE