Search for dissertations about: "inas gasb"
Showing result 11 - 15 of 24 swedish dissertations containing the words inas gasb.
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11. Novel Materials and Technologies for IR Optoelectronic Applications
Abstract : This thesis focuses on novel III-V materials (InAs/GaSb type-II superlattices, T2SL, and dilute bismides) and metamorphic growth techniques for infrared optoelectronics all of which may find wide spread applications in telecommunication, energy harvesting and saving, sensing and imaging. Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) photodetectors at the atmospheric windows of 3-5 and 8-12 µm, respectively, are currently dominated by HgCdTe and quantum well infrared photodetectors. READ MORE
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12. Quantum Transport in Heterostructure Nanowire Devices
Abstract : This thesis investigates electronic transport in several types of novel heterostructure nanowires. The first part of the thesis focuses on band-to-band mechanisms in heterostructure nanowires for low-power electronics. First, tunnel field-effect transistors (TFETs) based on InP/GaAs heterostructure nanowires with n-i-p doping profile are explored. READ MORE
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13. Electronic, Transport, and Optical Properties of Broken-Gap Heterostructures
Abstract : This thesis examines the physical properties of broken-gap heterostructures using a multiband k.p model and self-consistent calculations. Broken-gap heterostructures, made from InAs, GaSb, and AlSb, are characterized by a special band alignment with an overlap between the InAs conduction band and the GaSb valence band. READ MORE
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14. Development of new characterization techniques for III-V nanowire devices
Abstract : This dissertation presents the new methods and techniques developed to investigate the properties of nanowires (NWs) and NW devices and the results obtained using these methods. The growth and characterization of NWs have become a large research field because NWs have been shown to improve the properties of many semiconductor applications such as transistors, solar cells, and light emitting diodes. READ MORE
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15. Vertical III-V Nanowire Tunnel Field-Effect Transistors : A Circuit Perspective
Abstract : The energy scaling of integrated circuits has reached its limit because the operating voltage of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) based switches has reached its minimum value. MOSFETs are limited by thermionic emission and cannot achieve a subthreshold swing (SS) below 60 mV/decade at room temperature. READ MORE