Search for dissertations about: "metal fabrication"

Showing result 1 - 5 of 228 swedish dissertations containing the words metal fabrication.

  1. 1. Fabrication and Characterization of 3C- and4H-SiC MOSFETs

    Author : Romain Esteve; Carl-Mikael Zetterling; Tsunenobu Kimoto; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; MOSFETs; Fabrication; Characterization; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik; SRA - ICT; SRA - Informations- och kommunikationsteknik;

    Abstract : During the last decades, a global effort has been started towards the implementation of energy efficient electronics. Silicon carbide (SiC), a wide band-gap semiconductor is one of the potential candidates to replace the widespread silicon (Si) which enabled and dominates today’s world of electronics. READ MORE

  2. 2. Fabrication and Characterization of Plasmonic Nanophotonic Absorbers and Waveguides

    Author : Yiting Chen; Min Qiu; Min Yan; Francisco Javier García de Abajo; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanophotonics; plasmonics; fabrication; SRA - ICT; SRA - Informations- och kommunikationsteknik;

    Abstract : Plasmonics is a promising field of nanophotonics dealing with light interaction with metallic nanostructures. In such material systems, hybridizationof photons and collective free-electron oscillation can result in sub-wavelength light confinement. READ MORE

  3. 3. Silicon nanowire based devices for More than Moore Applications

    Author : Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
    Keywords : silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. READ MORE

  4. 4. Liquid metal microscale deposition for soft and stretchable skin-like electronics : Providing a soft and gentle contact to living beings

    Author : Bei Wang; Klas Hjort; Zhigang Wu; Magnus Berggren; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; laser patterning; sacrificial mask; liquid metal; strain sensor; skin movement; masking; shrink film; 3D conformal masking; liquid metal particles; soft electronics; stretchable electronics; compliant electronics; skin-like electronics; epidermal electronics; micro-heater; particle sintering; enteroendocrine cells; localized ectopic expression; wettability; flexography printing; conformal transfer printing; hydro printing; plant physiology; drosophila;

    Abstract : Skin-like electronics could provide a soft and gentle contact with living beings for perceiving and delivering the information of pressure, strain, temperature with higher spatial resolution and sensitivity than our skin, without disturbing the user. Gallium-based liquid metal (LM) is an excellent material for soft and stretchable skin-like devices, since it has high electrical and thermal conductivity, flowability, and self-healable capability. READ MORE

  5. 5. Electrical Characterization of III-V Nanostructure

    Author : Aein Shiri Babadi; Institutionen för elektro- och informationsteknik; []
    Keywords : High-κ; Metal-Oxide-Semicondcutor capacitors; MOSCAPs; III-V semiconductors; InAs; GaSb; interface traps; border traps; C-V; Simulations; Nanowire; MOSFET; Fabrication;

    Abstract : This thesis investigates the electronic properties of a number of novel III-V materials and material combinations for transistor applications. In particular, high-κ/InAs metal-oxide-semiconductor (MOS) structures and transport properties of GaSb nanowires have been studied. READ MORE