Search for dissertations about: "metal oxide semiconductor"

Showing result 1 - 5 of 127 swedish dissertations containing the words metal oxide semiconductor.

  2. 1. Physics of palladium metal-oxide-semiconductor devices

    Author : Mårten Armgarth; Linköpings universitet; []
    Keywords : ;

    Abstract : This thesis Palladium gate metal-oxide-semiconductor (PdMOS) devices are used as hydrogen sensors. It is shown that the sensitivity is only partly due to the change of the effective work function of the Pd gate on hydrogen adsorption. Sodium ion drift experiments have shown that hydrogen-sodium interactions occur in PdMOS devices. READ MORE

  4. 2. Advanced Nanostructured Transition Metal Oxide Semiconductors for Solar Energy Applications

    Author : Pedram Ghamgosar; Alberto Vomiero; Nils Almqvist; Federica Rigoni; Mauro Salvatore Epifani; Luleå tekniska universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metal Oxide; Photovoltaic; Semiconductors; Self-powered photodetectors; Photoelectrochemical cell; Solar fuel; Water splitting; Experimentell fysik; Experimental Physics;

    Abstract : Increasing energy consumption and its environmental impacts make it necessary to look for alternative energy sources. Solar energy as huge energy source that can cover the terms sustainability is considered as a favorable alternative. READ MORE

  5. 3. Gas sensitivity of modified metal-oxide-semiconductor devices

    Author : Eva Hedborg Karlsson; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Abstract : Gas sensitive thin metal-oxide-semiconductor (MOS) structures have been used to study the effect of different modifications of the gate metal. In order to increase the selectivity of the gas sensor photoresist was used as a gas permeable membrane. READ MORE

  6. 4. Electrical Characterization of Metal-Oxide-Silicon Structures with Ultra Thin Oxide Layers

    Author : Per Lundgren; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; tunneling; MTOS; oxide defects; MOS; PMA;

    Abstract : Metal-oxide-semiconductor (MOS) structures with very thin (2 - 4 nm) oxide layers thermally grown on silicon have been electrically characterized regarding oxide and interface defects and concerning the direct tunnel current through the oxide. This thesis comprises eight papers which deal with the appearance of oxide charge during electrical stress (papers A, D, E), the beneficial effect on the defect density of low-temperature (up to 350 °C) post-metallization annealing (PMA) (paper A, B, C, G), and the effect of temperature and choice of metal for the tunnel current (paper F, H). READ MORE

  7. 5. Silicon nanowire based devices for More than Moore Applications

    Author : Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
    Keywords : silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. READ MORE