Search for dissertations about: "metal-oxide-semiconductor capacitors"

Showing result 1 - 5 of 13 swedish dissertations containing the words metal-oxide-semiconductor capacitors.

  2. 1. Detection and removal of traps at the SiO2/SiC interface

    Author : Halldor Olafsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interface states; thermally stimulated current TSC ; positron annihilation spectroscopy PAS ; silicon carbide SiC ; metal-oxide-semiconductor field-effect transistor MOSFET ; transmission electron microscopy TEM ; deep level transient spectroscopy DLTS ; metal-oxide-semiconductor MOS ; field-effect mobility; capacitance-voltage C-V ;

    Abstract : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. READ MORE

  4. 2. Deposition of high quality thin dielectrics on silicon

    Author : Lars-Åke Ragnarsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; oxynitride; metal-oxide-semiconductor capacitors; RPECVD; silicon dioxide; interfaces; si-SiO2; remote plasma-enhanced CVD; ONO; C-V; nitrided interfaces; SiO2; deposited dielectrics;

    Abstract : .... READ MORE

  5. 3. Carbon nanomaterial-based interconnects, integrated capacitors and supercapacitors

    Author : Muhammad Amin; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; carbon nanotubes; Integrated capacitors; vertically aligned carbon nanofibers; Interconnects; PECVD; Interdigitated micro-supercapacitors;

    Abstract : The constant miniaturization and steady performance improvement of electronics devices have generated innovative ideas such as internet of thing (IoT), which also includes devices with integrated energy sources. The high performance is conceived by the high density of the devices on a chip leading to a high density of interconnects, to connect these devices to outside world. READ MORE

  6. 4. SiC CMOS and memory devices for high-temperature integrated circuits

    Author : Mattias Ekström; Carl-Mikael Zetterling; B. Gunnar Malm; Tobias Erlbacher; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; bismuth titanate Bi4Ti3O12 ; CMOS; ferroelectric capacitor; field oxide; inverter; metallisation; metal oxide semiconductor field effect transistor MOSFET ; ohmic contacts; ring oscillator; semiconductor processing; silicon carbide 4H-SiC ; CMOS; ferroelektrisk kondensator; fältoxid; halvledartillverkning; inverterare; kiselkarbid 4H-SiC ; metallisering; MOSFET; ohmska kontakter; ringoscillator; vismuttitanat Bi4Ti3O12 ; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : High-temperature electronics find use in extreme environments, like data logging in downhole drilling for geothermal energy production, inside of high-temperature turbines, industrial gas sensors and space electronics. The simplest systems use a sensor and a transmitter, but more advance electronic systems would additionally require a microcontroller with memory. READ MORE

  7. 5. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

    Author : Jun Wu; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

    Abstract : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. READ MORE